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UBA2014T/N1,518

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
UBA2014_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 16 October 2008 10 of 19
NXP Semiconductors
UBA2014
600 V driver IV for HF fluorescent lamps
9. Limiting values
[1] In accordance with the human body model, i.e. equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
10. Thermal characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages referenced to GND.
Symbol Parameter Conditions Min Max Unit
V
HS
high-side supply voltage I
HS
<30µA; t<1s - 600 V
I
HS
<30µA - 570 V
V
VDD
voltage at pin V
DD
-14V
V
ACM
voltage at pin ACM −5+5V
V
PCS
voltage at pin PCS −5+5V
V
LVS
voltage at pin LVS 0 5 V
V
CSP
voltage at pin CSP 0 5 V
V
CSN
voltage at pin CSN −0.3 +5 V
V
CSW
voltage at pin CSW 0 5 V
T
amb
ambient temperature −25 +80 °C
T
j
junction temperature −25 +150 °C
T
stg
storage temperature −55 +150 °C
V
esd
electrostatic discharge voltage
pins FV
DD
, GH and SH
[1]
−1000 +1000 V
pins CT, CSW, CF, IREF, GL, V
DD
,
PCS, CSN, CSP, VREF, LVS and ACM
[1]
−2500 +2500 V
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient in free air
SO16 100 K/W
DIP16 60 K/W
R
th(j-pin)
thermal resistance from junction to pin in free air
SO16 50 K/W
DIP16 30 K/W
UBA2014_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 16 October 2008 11 of 19
NXP Semiconductors
UBA2014
600 V driver IV for HF fluorescent lamps
11. Characteristics
Table 6. Characteristics
V
DD
=13V; V
FVDD
−
V
SH
= 13 V; T
amb
=25
°
C; all voltages referenced to GND; see test circuit of Figure 8; unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
Start-up state: pin V
DD
V
DD
supply voltage TR1 = off; TR2 = off - - 6 V
V
DD(reset)
reset supply voltage TR1 = off; TR2 = off 4.5 5.5 7.0 V
V
DD(stop)
oscillator stop supply voltage 8.6 9.1 9.6 V
V
DD(start)
oscillator start supply voltage 12.4 13.0 13.6 V
V
DD(hys)
start-stop hysteresis supply
voltage
3.5 3.9 4.4 V
V
DD(clamp)
clamp supply voltage Power-down mode 10 11 12 V
I
DD(start)
start-up supply current V
DD
<V
DD(start)
- 170 200 µA
I
DD(pd)
power-down supply current V
DD
= 9 V - 170 200 µA
I
DD
supply current f
bridge
= 40 kHz without gate
drive
- 1.5 2.2 mA
High-voltage supply: pins GH, SH and FV
DD
I
L
latching current 600 V at high-voltage pins - - 30 µA
Reference voltage: pin VREF
V
ref
reference voltage I
L
=10µA 2.86 2.95 3.04 V
∆V
VREF
reference voltage stability I
L
=10µA;
T
amb
=25°C to 150 °C
- −0.64 - %
I
source
source current 1 - - mA
I
sink
sink current 1 - - mA
Z
o
output impedance I
L
= 1 mA source - 3.0 - Ω
Current supply: pin IREF
V
I
input voltage - 2.5 - V
I
I
input current 65 - 95 µA
Voltage controlled oscillator
Output: pin CSW
V
o
output control voltage 2.7 3.0 3.3 V
V
clamp
clamp voltage burn state 2.8 3.1 3.4 V
Voltage controlled oscillator output: pin CF
f
max
maximum frequency 90 100 110 kHz
f
min
minimum frequency 38.9 40.5 42.1 kHz
∆f
stab
frequency stability T
amb
= −20 °C to +80 °C - 1.3 - %
t
start
first output oscillator stroke time - 50 - µs
t
no(min)
minimum non-overlap time GH to GL 0.68 0.90 1.13 µs
GL to GH 0.75 1.00 1.25 µs
t
no(max)
maximum non-overlap time f
bridge
=40kHz
[1]
- 7.5 - µs
V
CF(high)
high-level oscillator output
voltage
f=f
min
- 2.5 - V
UBA2014_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 16 October 2008 12 of 19
NXP Semiconductors
UBA2014
600 V driver IV for HF fluorescent lamps
I
o(start)
oscillator output start current V
CF
= 1.5 V 3.8 4.5 5.2 µA
I
o(min)
minimum oscillator output current V
CF
= 1.5 V - 21 - µA
I
o(max)
maximum oscillator output
current
V
CF
= 1.5 V - 54 - µA
Output drivers
High-side driver output: pin GH
V
OH
HIGH-level output voltage I
o
= 10 mA 12.5 - - V
V
OL
LOW-level output voltage I
o
= 10 mA - - 0.5 V
I
o(source)
output source current V
GH
− V
SH
= 0 V 135 180 235 mA
I
o(sink)
output sink current V
GH
− V
SH
= 13 V 265 330 415 mA
R
on
on resistance I
o
=10mA 323945Ω
R
off
off resistance I
o
=10mA 162126Ω
Low-side driver output: pin GL
V
OH
HIGH-level output voltage I
o
= 10 mA 12.5 - - V
V
OL
LOW-level output voltage I
o
= 10 mA - - 0.5 V
I
o(source)
output source current V
GL
= 0 135 200 235 mA
I
o(sink)
output sink current V
GL
= 13 V 265 330 415 mA
R
on
on resistance I
o
=10mA 323945Ω
R
off
off resistance I
o
=10mA 162126Ω
Floating supply voltage: pin FV
DD
V
FVDD
lockout voltage 2.8 3.5 4.2 V
I
FVDD
floating well supply current DC level at
V
GH
− V
SH
=13V
-35-µA
Bootstrap diode
V
boot
bootstrap diode forward drop
voltage
I=5mA 1.3 1.7 2.1 V
Preheat current sensor
Input: pin PCS
I
i
input current V
PCS
= 0.6 V - - 1 µA
V
ph
preheat voltage 0.57 0.60 0.63 V
Output: pin CSW
I
o(source)
output source current V
CSW
= 2.0 V 9.0 10 11 µA
I
o(sink)
output sink current V
CSW
= 2.0 V - 10 - µA
Adaptive non-overlap and capacitive mode detection; pin ACM
I
i
input current V
ACM
= 0.6 V - - 1 µA
V
CMDP
positive capacitive mode
detection voltage
80 100 120 mV
V
CMDN
negative capacitive mode
detection voltage
−68 −85 −102 mV
Table 6. Characteristics
…continued
V
DD
=13V; V
FVDD
−
V
SH
= 13 V; T
amb
=25
°
C; all voltages referenced to GND; see test circuit of Figure 8; unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

UBA2014T/N1,518

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Manufacturer:
NXP Semiconductors
Description:
Display Drivers & Controllers TL BALLAST
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