SQ1922EEH
www.vishay.com
Vishay Siliconix
S17-0905-Rev. B, 12-Jun-17
1
Document Number: 75204
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET
Marking Code: 8S
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
tested
• Typical ESD protection: 800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
PRODUCT SUMMARY
V
DS
(V) 20
R
DS(on)
(Ω) at V
GS
= 4.5 V 0.350
R
DS(on)
(Ω) at V
GS
= 2.5 V 0.600
I
D
(A) per leg 0.84
Configuration Dual
Package SC-70
SOT-363
SC-70 Dual (6 leads)
Top View
1
S
1
2
G
1
3
D
2
D
1
6
G
2
5
S
2
4
D
1
S
1
G
1
D
2
S
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
20
V
Gate-source voltage V
GS
± 12
Continuous drain current
a
T
C
= 25 °C
I
D
0.84
A
T
C
= 125 °C 0.49
Continuous source current (diode conduction)
a
I
S
0.54
Pulsed drain current
b
I
DM
3
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
3.3
Single Pulse Avalanche Energy E
AV
0.54 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
1.5
W
T
C
= 125 °C 0.5
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
R
thJA
460
°C/W
Junction-to-foot (drain) R
thJF
350