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S400YR

P1-P2
V
RRM
= 800 V - 1600 V
I
F
= 400 A
Features
• High Surge Capability DO-9 Package
• Types up to 1600 V V
RRM
Parameter Symbol Unit
Repetitive peak reverse voltage
V
RRM
V
Silicon Standard
Recovery Diode
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
800 1600
Conditions S400K (R) S400Q (R) S400Y (R)
1200
S400K thru S400YR
Repetitive
peak
reverse
voltage
RRM
V
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
0.14
400 400 400
8640 8640 8640
1131
1600
1.2 1.2
-60 to 200
12
1200800
10
S400Y (R)
1.2
10 10
-60 to 200 -60 to 200
-60 to 200 -60 to 200 -60 to 200
S400K (R) S400Q (R)
0.14 0.14
V
R
= 50 V, T
j
= 175 °C
12 12
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 120 °C
Conditions
848566
V
R
= 50 V, T
j
= 25 °C
I
F
= 400 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
www.genesicsemi.com
1
S400K thru S400YR
www.genesicsemi.com
2
P1-P2

S400YR

Mfr. #:
Buy S400YR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 1600V 400A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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