NRVTS1545EMFST1G

© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1 Publication Order Number:
NTS1545EMFS/D
NTS1545EMFS,
NRVTS1545EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Device Package Shipping
ORDERING INFORMATION
NTS1545EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
45 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1545 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE1545
AYWWZZ
A
A
A
Not Used
C
C
1
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS1545EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NRVTS1545EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NRVTS1545EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
NTS1545EMFS, NRVTS1545EMFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
I
F(AV)
15 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 164°C)
I
FRM
30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
210 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
1.3 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 5.0 Amps, T
J
= 25°C)
(i
F
= 7.5 Amps, T
J
= 25°C)
(i
F
= 15 Amps, T
J
= 25°C)
(i
F
= 5.0 Amps, T
J
= 125°C)
(i
F
= 7.5 Amps, T
J
= 125°C)
(i
F
= 15 Amps, T
J
= 125°C)
v
F
0.44
0.46
0.50
0.33
0.36
0.43
0.60
0.53
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
i
R
15
50
20
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
NTS1545EMFS, NRVTS1545EMFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.70.5 0.90.40.30.20.10
0.1
1
10
100
0.80.60.50.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
40302520151050
1.E−06
453530201050
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
1
100
1000
10,000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
0.9
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
35 45
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
15 25
1.E−05
1.E−04
1.E−03
1.E−02
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
10 50
T
A
= 175°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −55°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−01
Figure 6. Current Derating
T
C
, CASE TEMPERATURE (°C)
140130 170160110100
0
5
10
15
25
30
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
120 150
Square Wave
DC
R
q
JC
= 1.3°C/W
T
J
= 25°C
0.6 0.8 0.4 0.7
40
T
A
= 150°C
T
A
= 175°C
T
A
= 175°C
T
A
= 175°C

NRVTS1545EMFST1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 45V LOW LEAKAGE TRENCH RE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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