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NE3509M04-A

P1-P3P4-P6P7-P9
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10608EJ02V0DS (2nd edition)
Date Published October 2008 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
NE3509M04
NE3509M04-A
Flat-lead 4-pin thin-
type super minimold
(M04) (Pb-Free)
50 pcs (Non reel)
V80
NE3509M04-T2
NE3509M04-T2-A
3 kpcs/reel
NE3509M04-T2B
NE3509M04-T2B-A
15 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
200
A
Total Power Dissipation
Ptot
Note
150
mW
Channel Temperature
Tch
+150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
<R>
Data Sheet PG10608EJ02V0DS
2
NE3509M04
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
2
3
V
Drain Current
ID
10
20
mA
Input Power
Pin
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = 3 V
0.5
10
A
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
30
45
60
mA
Gate to Source Cutoff Voltage
VGS (off)
VDS = 2 V, ID = 50
A
0.25
0.5
0.75
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
80
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 2 GHz
0.4
0.7
dB
Associated Gain
Ga
16
17.5
dB
Gain 1 dB Compression
PO (1 dB)
VDS = 2 V, ID = 10 mA (Non-RF),
11
dBm
Output Power
f = 2 GHz
Data Sheet PG10608EJ02V0DS
3
NE3509M04
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
P1-P3P4-P6P7-P9

NE3509M04-A

Mfr. #:
Buy NE3509M04-A
Manufacturer:
CEL
Description:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Lifecycle:
New from this manufacturer.
Delivery:
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