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VF40120C-M3/4W

P1-P3P4-P4
VF40120C
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
1
Document Number: 89326
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.43 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
RRM
120 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.63 V
T
J
max. 150 °C
Package ITO-220AB
Diode variation Dual common cathode
TMBS
®
ITO-220AB
1
2
3
PIN 1
PIN 2
PIN 3
VF40120C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VF40120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
40
A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250 A
Voltage rating of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VF40120C
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
2
Document Number: 89326
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.50 -
V
I
F
= 10 A 0.60 -
I
F
= 20 A 0.78 0.88
I
F
= 5 A
T
A
= 125 °C
0.43 -
I
F
= 10 A 0.53 -
I
F
= 20 A 0.63 0.71
Reverse current per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
19 - μA
T
A
= 125 °C 10 - mA
V
R
= 120 V
T
A
= 25 °C - 500 μA
T
A
= 125 °C 22 45 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VF40120C UNIT
Typical thermal resistance per diode R
JC
4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB VF40120C-M3/4W 1.76 4W 50/tube Tube
Case Temperature (°C)
Average Forward Rectified Current (A)
50
40
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
Mounted on Specific Heatsink
30
20
10
0
2
6
10
14
18
0
41624
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
12
4
8
12
16
208
D = t
p
/T t
p
T
VF40120C
www.vishay.com
Vishay General Semiconductor
Revision: 17-Aug-15
3
Document Number: 89326
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.4
100
10
1
0.1
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
Instantaneous Forward Current (A)
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
P1-P3P4-P4

VF40120C-M3/4W

Mfr. #:
Buy VF40120C-M3/4W
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 40A,100V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
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