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NCV7382DR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NCV7382
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (V
S
= 7.0 to 18 V, V
CC
= 4.5 to 5.5 V and T
A
= -40 to 125°C unless otherwise noted.)
Characteristic
Symbol Condition Min Typ Max Unit
GENERAL
V
CC
Undervoltage Lockout V
CC_UV
EN = H, TxD = L 2.75 - 4.3 V
Supply Current, Dominant I
Sd
V
S
= 18 V, V
CC
= 5.5 V, TxD = L - 0.9 2.0 mA
Supply Current, Dominant I
CCd
V
S
= 18 V, V
CC
= 5.5 V, TxD = L - 0.6 2.0 mA
Supply Current, Recessive I
Sr
V
S
= 18 V, V
CC
= 5.5 V TxD = H - 25 50 A
Supply Current, Recessive I
CCr
V
S
= 18 V, V
CC
= 5.5 V TxD = H - 50 75 A
Supply Current, Sleep Mode I
Ssl
V
S
= 12 V, V
CC
and TxD = 0 V,
T
A
= 25°
- 6.5 - A
Supply Current, Sleep Mode I
Ssl
V
S
= 12 V, V
CC
and TxD = 0 V - 6.5 14 A
Thermal Shutdown T
sd
(Note 4) - 155 - 180 °C
Thermal Recovery T
hys
(Note 4) - 126 - 150 °C
BUS TRANSMIT
Short Circuit Bus Current I
BUS_LIM
(Notes 5 and 6)
V
BUS
= V
S
, Driver On - 120 200 mA
Pullup Current Bus I
BUS_PU
(Notes 5 and 6)
V
BUS
= 0, V
S
= 12 V, Driver Off -600 - -200 A
Pullup Current Bus I
BUS_PU_SLEEP
V
BUS
= 0, V
S
= 12 V, Sleep Mode -100 -75 - A
Bus Reverse Current,
Recessive
I
BUS_PAS_rec
(Notes 5 and 6)
V
BUS
> V
S,
8.0 V < V
BUS
< 18 V
7.0 V < V
S
< 18 V, Driver Off
- - 20 A
Bus Reverse Current Loss of
Battery
I
BUS
(Notes 5 and 6)
V
S
= 0 V, 0 V < V
BUS
< 18 V - - 100 A
Bus Current During Loss of
Ground
I
BUS_NO_GND
(Notes 5 and 6)
V
S
= 12 V, 0 < V
BUS
< 18 V -1.0 - 1.0 mA
Transmitter Dominant Voltage V
BUSdom_DRV_2
(Note 5)
V
S
= 7.0 V, Load = 500 - - 1.2 V
Transmitter Dominant Voltage V
BUSdom_DRV_3
(Note 5)
V
S
= 18 V, Load = 500 - - 2.0 V
Bus Input Capacitance C
BUS
(Note 4) Pulse Response via 10 k
V
PULSE
= 12 V, V
S
= Open
- 25 35 pF
BUS RECEIVE
Receiver Dominant Voltage V
BUSdom
(Notes 5 and 6)
- 0.4 *V
S
- - V
Receiver Recessive Voltage V
BUSrec
(Notes 5 and 6)
- - - 0.6*V
S
V
Center Point of Receiver
Threshold
V
BUS_CNT
(Notes 4, 5 & 6)
V
BUS_CNT
= (V
BUSdom
+ V
BUSrec
)/2 0.487
*V
S
0.5*V
S
0.512*V
S
V
Receiver Hysteresis V
HYS
(Notes 4, 5 & 6)
V
BUS_CNTt
= (V
BUSrec
- V
BUSdom
) - 0.16*V
S
- V
4. No production test, guaranteed by design and qualification.
5. In accordance to LIN physical layer specification 1.3.
6. In accordance to LIN physical layer specification 2.0.
NCV7382
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (V
S
= 7.0 to 18 V, V
CC
= 4.5 to 5.5 V and T
A
= -40 to 125°C unless otherwise noted.)
Characteristic
Symbol Condition Min Typ Max Unit
TXD, EN
High Level Input Voltage
V
ih
Rising Edge - - 0.7*V
CC
V
Low Level Input Voltage V
il
Falling Edge 0.3*V
CC
- - V
TxD Pullup Resistor R
IH_TXD
V
TxD
= 0 V 10 15 25 k
EN Pulldown Resistor R
IL_EN
V
EN
= 5.0 V 20 30 50 k
RXD
Low Level Output Voltage V
ol_rxd
I
RxD
= 2.0 mA - - 0.9 V
Leakage Current V
leak_rxd
V
RxD
= 5.5 V, Recessive -10 - 10 A
INH
On Resistance R
on_INH
Normal or Standby Mode,
V
INH
= V
S
- 1.0 V, V
S
= 12 V
- 20 50
Leakage Current I
INH_lk
EN = L, V
INH
= 0 V -5.0 - 5.0 A
AC CHARACTERISTICS
Characteristic Symbol Condition Min Typ Max Unit
Propagation Delay Transmitter
(Notes 7 and 9)
t
trans_pdf
t
trans_pdr
Bus Loads: 1.0 K/1.0 nF,
660 /6.8 nF, 500 /10 nF
- - 5.0 s
Propagation Delay Transmitter Symmetry
(Notes 8 and 9)
t
trans_sym
Calculate t
trans_pdf
- t
trans_pdr
-2.0 - 2.0 s
Propagation Delay Receiver
(Notes 7, 9, 12, 13 and 14)
t
rec_pdf
t
rec_pdr
C
RxD
= 20 pF - - 6.0 s
Propagation Delay Receiver Symmetry
(Notes 9, 11 and 12)
t
rec_sym
Calculate t
trans_pdf
- t
trans_pdr
-2.0 - 2.0 s
Slew Rate Rising and Falling Edge,
High Battery (Notes 8, 11 and 12)
|t
SR_HB
| Bus Loads: V
S
= 18 V,
1.0 K/1.0 nF, 660 /6.8 nF,
500 /10 nF
1.0 2.0 3.0 V/s
Slew Rate Rising and Falling Edge,
Low Battery (Notes 8, 11 and 12)
|t
SR_LB
| Bus Loads: V
S
= 7.0 V,
1.0 K/1.0 nF, 660 /6.8 nF,
500 /10 nF
0.5 2.0 3.0 V/s
Slope Symmetry, High Battery
(Notes 11 and 12)
t
ssym_HB
Bus Loads: V
S
= 18 V,
1.0 k/1.0 nF, 660 /6.8 nF,
500 /10 nF,
Calculate t
sdom
– t
srec
-5.0 - +5.0 s
Bus Duty Cycle (Note 13) D1
D2
Calculate t
BUS_rec(min)
/100 s
Calculate t
BUS_rec(max)
/100 s
0.396
-
-
-
-
0.581
s/s
s/s
Receiver Debounce Time
(Notes 8, 11 and 14)
t
rec_deb
BUS Rising and Falling Edge 1.5 - 4.0 s
Wakeup Filter Time t
wu
Sleep Mode,
BUS Rising & Falling Edge
30 - 150 s
EN - Debounce Time t
en_deb
Normal -> Sleep Mode Trans‐
ition
10 20 40 s
7. Propagation delays are not relevant for LIN protocol transmission, value only information parameter.
8. No production test, guaranteed by design and qualification.
9. See Figure 2 - Input/Output Timing.
10. See Figure 8 - Slope Time Calculation.
11. See Figure 3 - Receiver Debouncing.
12. In accordance to LIN physical layer specification 1.3.
13. In accordance to LIN physical layer specification 2.0.
14. This parameter is tested by applying a square wave to the bus. The minimum slew rate for the bus rising and falling edges is 50 V/s.
NCV7382
http://onsemi.com
6
TIMING DIAGRAMS
Figure 2. Input/Output Timing
50%
50%
50%
50%
100%
95%
0%
5%
t
trans_pdf
t
trans_pdr
t
rec_pdr
t
rec_pdf
V
BUS
TxD
RxD
BUS
Figure 3. Receiver Debouncing
60%
50%
t < t
rec_deb
V
BUS
V
RxD
40%
t < t
rec_deb
t
t
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

NCV7382DR2G

Mfr. #:
Buy NCV7382DR2G
Manufacturer:
ON Semiconductor
Description:
RF Transceiver ENHANCED LIN TRNSCVR
Lifecycle:
New from this manufacturer.
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