NCV7382
http://onsemi.com
3
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings (in accordance with IEC 134)
given in the table below are limiting values that do not lead
to a permanent damage of the device but exceeding any of
these limits may do so. Long term exposure to limiting
values may effect the reliability of the device.
OPERATING CONDITIONS
Characteristic Symbol Min Max Unit
V
S
V
S
7.0 18 V
V
CC
V
CC
4.5 5.5 V
Operating Ambient Temperature T
A
-40 +125 °C
MAXIMUM RATINGS
Rating Symbol Condition Min Max Unit
V
S
V
S
t < 1 min
-0.3
30 V
Load Dump, t < 500 ms 40
V
CC
V
CC
- -0.3 +7.0 V
Transient Supply Voltage V
S.tr1
ISO 7637/1 Pulse 1 (Note 1) -150 - V
Transient Supply Voltage V
S..tr2
ISO 7637/1 Pulses 2 (Note 1) - 100 V
Transient Supply Voltage V
S..tr3
ISO 7637/1 Pulses 3A, 3B -150 150 V
BUS Voltage V
BUS
t < 500 ms , Vs = 18 V -27
40
V
t < 500 ms ,Vs = 0 V -40
Transient Bus Voltage V
BUS..tr1
ISO 7637/1 Pulse 1 (Note 2) -150 - V
Transient Bus Voltage V
BUS.tr2
ISO 7637/1 Pulses 2 (Note 2) - 100 V
Transient Bus Voltage V
BUS.tr3
ISO 7637/1 Pulses 3A, 3B (Note 2) -150 150 V
DC Voltage on Pins TxD, RxD V
DC
- -0.3 7.0 V
ESD Capability, Charged Device Model V
ESDCDM
(Note 3) -1.0 1.0 kV
ESD Capability of BUS, RxD, TxD, V
CC
, EN Pins
ESD Capability of V
S
Pin
V
ESDHBM
Human Body Model, equivalent to
discharge 100 pF with 1.5 k (Note 3)
-2.0
-1.5
2.0
1.5
kV
Maximum Latchup Free Current at Any Pin I
LATCH
- -500 500 mA
Maximum Power Dissipation P
tot
At T
A
= 125°C - 197 mW
Thermal Impedance
JA
In Free Air - 152 °C/W
Storage Temperature T
stg
- -55 +150 °C
Junction Temperature T
J
- -40 +150 °C
LEAD TEMPERATURE SOLDERING REFLOW
Lead Free, 60 sec -150 sec above 217, 40 sec Max at Peak T
SLD
- 265 Peak °C
Leaded, 60 sec -150 sec above 183, 30 sec Max at Peak T
SLD
- 240 Peak °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. ISO 7637 test pulses are applied to V
S
via a reverse polarity diode and > 2.0 F blocking capacitor.
2. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
3. This device incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC-Q100-002 (EIA/JESD22-A 114C)
ESD CDM tested per EIA/JESD22-C 101C, Field Induced Model.
