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ST2310DHI

P1-P3P4-P6
ST2310DHI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■ NEW SERIES, ENHANCED PERFORMANCE
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
■ INTEGRATED FREE WHEELING DIODE
■ HIGH VOLTAGE CAPABILITY (> 1500 V)
■ HIGH SWITCHING SPEED
■ TIGTHER hfe CONTROL
■ IMPROVED RUGGEDNESS
APPLICATIONS:
■ HORIZONTAL DEFLECTION HIGH END TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
®
INTERNAL SCHEMATIC DIAGRAM
April 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 1500 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 600 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current (t
p
< 5 ms) 25 A
I
B
Base Current 7 A
P
tot
Total Dissipation at T
c
= 25
o
C55W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
2500 V
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
ISOWATT218
R
BE
=32 Ω
Typ.
1/6
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
J
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V 70 210 mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 800 mA 7 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
I
C
= 7 A I
B
= 1.75 A 3 V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
I
C
= 7 A I
B
= 1.75 A 1.1 V
h
FE
∗ DC Current Gain I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 1 V
I
C
= 7 A V
CE
= 5 V 5.5
15
5
8.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A f = 32 KHz
I
B(on)
= 0.9 A V
BE(off)
= -2.5 V
L
BB(off)
= 1.9 µH (see figure 1)
2
0.25
2.5
0.5
µs
µs
V
f
Diode Forward Voltage I
C
= 7 A 1.5 2.2 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
ST2310DHI
2/6
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
DC Current Gain
ST2310DHI
3/6
P1-P3P4-P6

ST2310DHI

Mfr. #:
Buy ST2310DHI
Manufacturer:
STMicroelectronics
Description:
TRANS NPN 600V 12A ISOWATT218FX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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