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UH3B-E3/9AT

P1-P3P4-P5
UH3B, UH3C, UH3D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
1
Document Number: 89109
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, Diodes-Europe@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
100 V, 150 V, 200 V
I
FSM
80 A
t
rr
25 ns
V
F
at I
F
= 3.0 A 0.75 V
T
J
max. 175 °C
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH3B UH3C UH3D UNIT
Device marking code HB HC HD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current (fig. 1)
I
F(AV)
(1)
2.5
A
I
F(AV)
(2)
3.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
UH3B, UH3C, UH3D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
2
Document Number: 89109
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, Diodes-Europe@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
Note
(1)
AEC-101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.85 -
V
I
F
= 3.0 A 0.95 1.05
I
F
= 1.5 A
T
A
= 125 °C
0.65 -
I
F
= 3.0 A 0.75 0.90
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-5
μA
T
A
= 125 °C 15 100
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
l
rr
= 0.25 A
T
A
= 25 °C t
rr
14 25
ns
Typical reverse recovery time
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, l
rr
= 0.1 I
RM
23 40
Typical softness factor (t
b
/t
a
)
I
F
= 3.0 A, dI/dt = 200 A/μs,
V
R
= 200 V
T
A
= 125 °C
S0.2 -
Typical reverse recovery current I
RM
5.0 7.0 A
Typical stored charge Q
rr
60 - nC
Typical junction capacitance 4.0 V, 1 MHz C
J
42 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH3B UH3C UH3D UNIT
Typical thermal resistance
R
JA
(1)
95
°C/W
R
JM
(1)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
UH3D-E3/57T 0.236 57T 850 7" diameter plastic tape and reel
UH3D-E3/9AT 0.236 9AT 3500 13" diameter plastic tape and reel
UH3DHE3/57T
(1)
0.236 57T 850 7" diameter plastic tape and reel
UH3DHE3/9AT
(1)
0.236 9AT 3500 13" diameter plastic tape and reel
UH3DHE3_A/H
(1)
0.236 H 850 7" diameter plastic tape and reel
UH3DHE3_A/I
(1)
0.236 I 3500 13" diameter plastic tape and reel
UH3B, UH3C, UH3D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
3
Document Number: 89109
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, Diodes-Europe@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
3.5
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
T
M
- Mount Temperature (°C)
Resistive or Inductive Load
3.0
2.5
2.0
1.5
0.5
T
M
Measured
at Mount of Terminal
1.0
0
0.5
2.0
3.0
0 3.50.5
Average Power Loss (W)
Average Forward Current (A)
3.02.01.51.0
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
1.0
1.5
2.5
2.5
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.6
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
1.4
T
A
= 175 °C
0.1
1
10
100
1000
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
20 40 60 80 100
0.01
Instantaneous Reverse Current (µA)
10 30 50 70 90
T
A
= 175 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.001 101 100
100
1000
1
10
0.1
Junction to Ambient
0.01
P1-P3P4-P5

UH3B-E3/9AT

Mfr. #:
Buy UH3B-E3/9AT
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers RECOMMENDED ALT 78-VS-3ECH01-M39AT
Lifecycle:
New from this manufacturer.
Delivery:
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