2SD2674
Transistors
2/2
!
!!
!Electrical characteristic curves
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
10
DC CURRENT GAIN : h
FE
100
1000
Ta=25°C
Ta=−40°C
Ta=100°C
V
CE
=2V
Pulsed
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
BASE SATURATION VOLTAGE : VBE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
0.1
0.01
10
1
Ta=25°C
Ta=25°C
Ta=−40°C
Ta=−40°C
Ta=100°C
Ta=100°C
V
BE(sat)
V
CE(sat)
IC/IB=20
Pulsed
IC/IB=20/1
Pulsed
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
0.01
0.1
1
Ta=25°C
V
CE
=2V
I
C
/I
B
=50/1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
0
0.001
0.01
0.1
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.4 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(A)
1.51.00.5
V
CE
=2V
Pulsed
Ta=25°C
Ta=−40°C
Ta=100°C
−0.001 −0.01 −0.1 −1 −10
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
TRANSITION FREQUENCY : f
T
(MHz)
100
1000
V
CE
=2V
Ta=25°C
Pulsed
0.01 0.1 1 10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
1
SWITCHING TIME : (ns)
10
100
1000
Ta=25°C
V
CE
=2V
f=100MHz
tstg
tdon
tr
tf
0.1 1 10 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
100
Cib
Cob
I
E
=0A
f=1MHz
Ta=25°C
