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Document Number: 71122
S09-0867-Rev. C, 18-May-09
Vishay Siliconix
Si4818DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
Ch-1 0.8
V
Ch-2 1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= 20 V
Ch-1 100
nA
Ch-2 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
Ch-1 1
µA
Ch-2 100
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
Ch-1 15
Ch-2 2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
Ch-1 20
A
Ch-2 30
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 6.3 A Ch-1 0.018 0.022
Ω
V
GS
= 10 V, I
D
= 9.5 A
Ch-2 0.0125 0.0155
V
GS
= 4.5 V, I
D
= 5.4 A
Ch-1 0.024 0.030
V
GS
= 4.5 V, I
D
= 8.2 A
Ch-2 0.0165 0.0205
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6.3 A
Ch-1 17
S
V
DS
= 15 V, I
D
= 9.5 A
Ch-2 28
Diode Forward Voltage
b
V
SD
I
S
= 1.3 A, V
GS
= 0 V
Ch-1 0.7 1.1
V
I
S
= 1 A, V
GS
= 0 V
Ch-2 0.47 0.5
Dynamic
a
Total Gate Charge
Q
g
Channel-1
V
DS
= 15 V, V
GS
= 5 V, I
D
= 6.3 A
Channel-2
V
DS
= 15 V, V
GS
= 5 V, I
D
= - 9.5 A
Ch-1 8.0 12
nC
Ch-2 15 23
Gate-Source Charge
Q
gs
Ch-1 1.75
Ch-2 5.3
Gate-Drain Charge
Q
gd
Ch-1 3.2
Ch-2 4.6
Gate Resistance
R
g
Ch-1 1.5 6.1
Ω
Ch-2 0.5 2.6
Tur n - O n D e l ay Time
t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
Channel-2
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
Ch-1 10 20
ns
Ch-2 15 30
Rise Time
t
r
Ch-1 5 10
Ch-2 5 10
Turn-Off Delay Time
t
d(off)
Ch-1 26 50
Ch-2 44 80
Fall Time
t
f
Ch-1 8 16
Ch-2 12 24
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.3 A, dI/dt = 100 A/µs
Ch-1 30 60
I
F
= 2.2 A, dI/dt = 100 µA/µs
Ch-2 32 70
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47 0.50
V
I
F
= 1.0 A, T
J
= 125 °C
0.36 0.42
Maximum Reverse Leakage Current
I
rm
V
R
= 30 V
0.004 0.100
mA
V
R
= 30 V, T
J
= 100 °C
0.7 10
V
R
= - 30 V, T
J
= 125 °C
3.0 20
Junction Capacitance
C
T
V
R
= 10 V
50 pF