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IXTQ44N50P

P1-P3P4-P5
© 2014 IXYS CORPORATION, All Rights Reserved
DS99372F(04/14)
IXTQ44N50P
Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 500 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 500 V
V
GSS
Continuous 30 V
V
GSM
Transient 40 V
I
D25
T
C
= 25C 44 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
110 A
I
A
T
C
= 25C44 A
E
AS
T
C
= 25C 1.7 J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 10 V/ns
P
D
T
C
= 25C 658 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in
Weight 5.5 g
V
DSS
= 500V
I
D25
= 44A
R
DS(on)
140m
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 3.0 5.0 V
I
GSS
V
GS
= 30V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 A
T
J
= 125C 500 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 140 m
G = Gate D = Drain
S = Source Tab = Drain
TO-3P
D
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTQ44N50P
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1 20 32 S
C
iss
5440 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 639 pF
C
rss
40 pF
t
d(on)
28 ns
t
r
29 ns
t
d(off)
85 ns
t
f
27 ns
Q
g(on)
98 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
35 nC
Q
gd
30 nC
R
thJC
0.19 C/W
R
thCS
0.25C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 44 A
I
SM
Repetitive, Pulse Width Limited by T
JM
110 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
400 ns
I
F
= 22A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
TO-3P Outline
© 2014 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value
vs. Junction Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 44A
I
D
= 22A
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value
vs. Drain Current
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
40
45
50
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTQ44N50P
P1-P3P4-P5

IXTQ44N50P

Mfr. #:
Buy IXTQ44N50P
Manufacturer:
Littelfuse
Description:
MOSFET 44 Amps 500V 0.14 Ohm Rds
Lifecycle:
New from this manufacturer.
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