TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 24-Aug-11
1
Document Number: 81021
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
p
= 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared remote control and free air data transmission
systems
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
TSHA6200 40 ± 12 875 600
TSHA6201 50 ± 12 875 600
TSHA6202 60 ± 12 875 600
TSHA6203 65 ± 12 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA6200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA6203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾