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2SK3480-AZ

P1-P3P4-P6P7-P9P10-P10
Data Sheet D15078EJ1V0DS
5
2SK3480
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
−50
0
0
10
20
30
40
50
60
70
50
100 150
10 V
V
GS
= 4.5 V
Pulsed
I
D
= 25 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
SD
- Diode Forward Current - A
0
1.5
V
SD
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
0 V
V
GS
= 10 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.01
100
1000
10000
0.1 1 10 100
V
GS
= 0 V
f = 1 MHz
C
rss
C
oss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
1
10.1
100
1000
10 100
t
f
t
r
t
d(on)
t
d(off)
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0 Ω
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Drain Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/ns
V
GS
= 0 V
1
0.1
10
1 10 100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
200
0
20
40
60
80
100
0
2
4
6
8
10
40 60 80
I
D
= 83 A
V
DD
= 80 V
50 V
20 V
V
DS
V
GS
Data Sheet D15078EJ1V0DS
6
2SK3480
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
I
AS
- Single Avalanche Current - A
10
100
1000
110
V
DD
= 50
V
V
GS
= 20
→
0
V
R
G
= 25 Ω
I
AS
= 34
A
0.01 0.1
1
E
AS
=
116 mJ
Starting T
ch
= 25˚C
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50
75 100
160
140
120
100
80
60
40
20
0
125 150
V
DD
= 50 V
R
G
= 25 Ω
V
GS
= 20 → 0 V
I
AS
≤ 34 A
Data Sheet D15078EJ1V0DS
7
2SK3480
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8±0.2
4) TO-220SMD(MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TY
P
.
0.8R TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
P1-P3P4-P6P7-P9P10-P10

2SK3480-AZ

Mfr. #:
Buy 2SK3480-AZ
Manufacturer:
Renesas Electronics
Description:
MOSFET POWER MOS FET
Lifecycle:
New from this manufacturer.
Delivery:
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