FDG314P Datasheet FDG314P | P1-P3

FDG314P

FDG314P Rev.C

FDG314P

Digital FET, P-Channel

July 2000

2000 Fairchild Semiconductor International

Absolute Maximum Ratings

T

A

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage -25 V

V

GSS

Gate-Source Voltage

±

8V

I

D

Drain Current - Continuous (Note 1a) -0.65 A

- Pulsed -1.8

Power Dissipation for Single Operation

(Note 1a)

0.75 W

P

D

(Note 1b)

0.48

T

J

, T

stg

Operating and Storage Junction Temperature Range -55 to +150 °

C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf/1500 Ohm)

6.0

kV

Thermal Characteristics

R

θ

JA

Thermal Resistance, Junction-to-Ambient (Note 1b) 260

°

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.

14

FDG314P 7’’ 8mm 3000 units

General Description

This P-Channel enhancement mode field effect

transistor is produced using Fairchild Semiconductor’s

proprietary, high cell density, DMOS technology. This

very high density process is tailored to minimize on-

state resistance at low gate drive conditions. This

device is designed especially for battery power

applications such as notebook computers and cellular

phones. This device has excellent on-state resistance

even at gate drive voltages as low as 2.5 volts.

Applications

• Power Management

• Load switch

• Signal switch

Features

• -0.65 A, -25 V. R

DS(ON)

= 1.1 Ω @ V

GS

= -4.5 V

R

DS(ON)

= 1.5 Ω @ V

GS

= -2.7 V.

• Very low gate drive requirements allowing direct

operation in 3V cirucuits (V

GS(th)

<1.5 V).

• Gate-Source Zener for ESD ruggedness

(>6 kV Human Body Model).

• Compact industry standard SC70-6 surface mount

package.

SC70-6

D

S

D

G

D

3

5

6

4

1

2

3

FDG314P

FDG314P Rev.C

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, I

D

= -250

µ

A

-25 V

∆

BV

DSS

∆

T

J

Breakdown Voltage Temperature

Coefficient

I

D

= -250

µ

A, Referenced to 25

°

C

-19

mV/

°

C

I

DSS

Zero Gate Voltage Drain Current V

DS

= -20 V, V

GS

= 0 V -1 µ

A

I

GSS

Gate-Body Leakage Current V

GS

= -8 V, V

DS

= 0 V -100 nA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250

µ

A

-0.65 -0.72 -1.5 V

∆

V

GS(th)

∆

T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= -250

µ

A, Referenced to 25

°

C

2

mV/

°

C

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= -4.5 V, I

D

= -0.5 A

V

GS

= -4.5 V, I

D

= -0.5 A @ 125

°

C

V

GS

= -2.7 V, I

D

= -0.25 A

0.77

1.08

1.06

1.1

1.8

1.5

Ω

I

D(on)

On-State Drain Current V

GS

= -4.5 V, V

DS

= -5 V -1 A

g

FS

Forward Transconductance V

DS

= -4.5 V, I

D

= -0.5 A 0.9 S

Dynamic Characteristics

C

iss

Input Capacitance 63 pF

C

oss

Output Capacitance 34 pF

C

rss

Reverse Transfer Capacitance

V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

10 pF

Switching Characteristics (Note 2)

t

d(on)

Turn-On Delay Time 7 20 ns

t

r

Turn-On Rise Time 8 20 ns

t

d(off)

Turn-Off Delay Time 55 110 ns

t

f

Turn-Off Fall Time

V

DD

= -6 V, I

D

= -0.5 A,

V

GS

= -4.5 V, R

GEN

= 50

Ω

35 70 ns

Q

g

Total Gate Charge 1.1 1.5 nC

Q

gs

Gate-Source Charge 0.32 nC

Q

gd

Gate-Drain Charge

V

DS

= -5 V, I

D

= -0.25 A,

V

GS

= -4.5 V

0.25 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -0.42 A

V

SD

Drain-Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= -0.42 A (Note 2)

-0.85 -1.2 V

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

a) 170°C/W when mounted on a 1 in

2

pad of 2oz copper.

b) 260°C/W when mounted on a minimum mounting pad.

FDG314P

FDG314P Rev.C

Typical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

0

0.4

0.8

1.2

1.6

2

012345

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

-1.5V

-2.0V

-2.5V

-3.0V

-3.5V

V

GS

= -4.5V

-4.0V

-2.7V

0.8

1

1.2

1.4

1.6

1.8

2

0 0.4 0.8 1.2 1.6 2

-I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= -2.5V

-3.0V

-2.7V

-4.0V

-3.5V

-4.5V

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANC

E

I

D

= -0.5A

V

GS

= -4.5V

0

0.4

0.8

1.2

1.6

2

2.4

2.8

12345

-V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= -0.33A

T

A

= 125

o

C

T

A

= 25

o

C

0

0.3

0.6

0.9

1.2

01234

-V

GS

, GATE TO SOURCE VOLTAGE (V)

-I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= -5V

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1 1.2

-V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

-I

S

, REVERSE DRAIN CURRENT (A)

V

GS

= 0V

T

A

= 125

o

C

25

o

C

-55

o

C

FDG314P

FDG314P

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