Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
DD100N16SHPSA1
P1-P3
P4-P6
P7-P9
P10-P10
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD100N16S
Date of Publicat
ion 2016-02-
02
Revision 3.2
Seite/page
:
1
/1
0
Key Parameters
V
DRM
/ V
RRM
1600 V
I
F
AVM
130
A (T
C
=
100
°C)
3570A (T
C
=55°C)
I
F
SM
25
00 A
V
T0
0,8
7
V
r
T
2
,5
4
mΩ
R
thJC
0,19
K/W
Base plate
20
mm
W
eight
75
g
For type designation
please refer to actu
al
short form c
atalog
http://www.ifbip.com
/catalog
Merkmale
Features
Löt
-Löt T
echnologie
Solder-
So
lder Technolog
y
Industrie-Standard
-Gehäuse
Industrial standard pack
age
Elektrisch isolierte B
odenplatte
Electrically insulated
base plate
Typische Anwendung
en
Typical Applications
Gleichrichter für Antr
iebsapplikationen
Rectifier for drives ap
plications
Gleichrichter für UP
S
Rectifiers for U
PS
Batterieladegleichrichter
Battery chargers
content of customer DMX code
DMX code
DMX code
digit
digit quantity
type designation
1..
18
18
serial number
19..23
5
internal production order number
24..31
8
material number
32..41
10
date code (YY/
WW
)
42
..
45
4
add on for date code
46
1
www.ifbip.com
support@infineon-bip.com
1
2
3
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD100N16S
Date of Publicat
ion 2016-02-
02
Revision 3.2
Seite/page
:
2
/1
0
Elektrische Eigens
chaften / Elec
trical properties
Höchstzuläs
sige Werte / Ma
ximum rated value
s
DD100N16S
Periodische Spitze
nsperrspannun
g
repetitive peak re
verse voltage
s
T
vj
=
-40°C... T
vj max
V
RRM
1600
V
Stoßspitzenspe
rrspannung
non
-repetitive peak reve
rse voltag
e
T
vj
= +25°C... T
vj max
V
RSM
1700
V
Durchlaßstro
m-Grenzeffektivw
ert
maximum RM
S on-state current
I
FRMSM
210
A
Dauergr
enzstrom
average
on-state current
T
C
=
100 °
C
I
FAVM
134
A
Stoßstrom-Grenzw
ert
surge current
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I
FSM
2500
2000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I²t
31250
20000
A²s
A²s
Charakteristische
Werte / Char
acteristic value
s
Durchlaßspannung
on
-state voltage
T
vj
= 25°C
i
F
=
300
A
v
F
ma
x.
1,6
V
Schleusenspannun
g
threshold voltage
T
vj
= T
vj max
V
(TO)
max.
0,87
V
Ersatzwider
stand
slope resistance
T
vj
= T
vj max
r
T
max.
2,45
m
Ω
Sperrstrom
reverse curren
t
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
3
mA
Isolations-Prüfspa
nnung
insulation test voltag
e
RMS, f = 50Hz, t
= 1 sec
RMS, f = 50Hz, t
= 1 min
V
ISOL
3,6
3
,0
kV
kV
Thermische Ei
genschaften / T
hermal properties
Innerer Wärmew
iderstand
thermal resistance
, junction to
case
pro Modu
l / per Module,
Θ
= 180°
sin
pro Zwe
ig / per arm,
Θ
= 180° sin
pro Modu
l / per Module, DC
pro Zwe
ig / per arm, DC
R
thJC
max.
max.
max.
max.
0,1
00
0,2
00
0,095
0,190
K/W
K/W
K/W
K/W
Übergang
s-Wärmewiderstand
thermal resistance
, case to
heatsink
pro Modu
l / per Module
pro Zwe
ig / per arm
R
thCH
max.
max.
0,11
0,22
K/W
K/W
Höchstzuläs
sige Sperrschicht
temperatur
maximum junction
temperature
T
vj max
130
°C
Betriebstemperatur
operating temperatur
e
T
c op
- 40...+125
°C
Lagertemperatur
storage te
mperature
T
stg
- 40...+125
°C
prepared by:
AG
date of publication:
201
6-02-
02
approve
d by:
MS
revision:
3.2
Netz-Dioden-M
odul
Rectifier Diode M
odule
Technische Informati
on /
technical information
DD100N16S
Date of Publicat
ion 2016-02-
02
Revision 3.2
Seite/page
:
3
/1
0
Mechanische E
igenschaften
/ Mechanical propert
ies
Gehäuse, siehe
Anlage
case, see annex
Seite 4
page 4
Innere Isolation
internal insulation
Basisisolierung (S
chutzklasse
1, EN 6114
0)
Basic insulation (
class 1, IEC 61
140)
Al
2
O
3
Anzugsdreh
moment für me
chanische Anschlüs
se
mounting torqu
e
Toleranz ±15%
M1
5
Nm
Anzugsdreh
moment für elektris
che Anschlü
sse
terminal connec
tion torque
Toleranz ±15%
M2
3
Nm
Gewicht
weight
G
typ.
75
g
Kriechstre
cke
creepage distance
mm
Schwingfestigkei
t
vibration resistan
ce
f = 50Hz
50
m/s²
file-No.
E 83336
P1-P3
P4-P6
P7-P9
P10-P10
DD100N16SHPSA1
Mfr. #:
Buy DD100N16SHPSA1
Manufacturer:
Infineon Technologies
Description:
Discrete Semiconductor Modules Solder Contact Modules
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
DD100N16SHPSA1
