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NIF62514T3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 7
1 Publication Order Number:
NIF62514/D
NIF62514
Self-Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• Low R
DS(on)
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• This is a Pb−Free Device
6.0 AMPERES*
40 VOLTS CLAMPED
R
DS(on)
= 90 mW
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
*Limited by the current limit circuit.
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
62514 = Specific Device Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
AYW
62514G
G
23
4
GATE
DRAIN
SOURCE
DRAIN
2
3
4
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NIF62514T1G SOT−223
(Pb−Free)
1000/Tape & Reel
NIF62514T3G SOT−223
(Pb−Free)
4000/Tape & Reel
NIF62514
http://onsemi.com
2
MOSFET MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
40 Vdc
Drain−to−Gate Voltage Internally Clamped (R
GS
= 1.0 MW)
V
DGR
40 Vdc
Gate−to−Source Voltage V
GS
"16 Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Pulsed (t
p
≤ 10 ms)
I
D
I
D
I
DM
Internally Limited
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
A
= 25°C (Note 3)
P
D
1.1
1.73
8.93
W
Thermal Resistance,
Junction−to−Ta b
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
R
q
JT
R
q
JA
R
q
JA
14
114
72.3
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, V
DS
= 40 Vdc, I
L
= 2.8 Apk, L = 80 mH, R
G
= 25 W)
E
AS
300 mJ
Operating and Storage Temperature Range T
J
, T
stg
−55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NIF62514
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
(V
GS
= 0 Vdc, I
D
= 250 mAdc, T
J
= 150°C) (Note 4)
V
(BR)DSS
42
42
46
45
50
50
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C) (Note 4)
I
DSS
−
−
0.5
2.0
2.0
10
mAdc
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
(V
GS
= −5.0 Vdc, V
DS
= 0 Vdc)
I
GSS
−
−
50
550
100
1000
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 150 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
4.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 10 Vdc, I
D
= 1.4 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 1.4 Adc, T
J
@ 150°C) (Note 4)
R
DS(on)
−
−
90
165
100
190
mW
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 5.0 Vdc, I
D
= 1.4 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 1.4 Adc, T
J
@ 150°C) (Note 4)
R
DS(on)
−
−
105
185
120
210
mW
Source−Drain Forward On Voltage
(I
S
= 7 A, V
GS
= 0 V)
V
SD
− 1.05 − V
SWITCHING CHARACTERISTICS (Note 4)
Turn−on Delay Time 10% V
in
to 10% I
D
R
L
= 4.7 W, V
in
= 0 to 10 V, V
DD
= 12 V
t
d(on)
− 4.0 8.0
ms
Turn−on Rise Time 10% I
D
to 90% I
D
R
L
= 4.7 W, V
in
= 0 to 10 V, V
DD
= 12 V
t
rise
− 11 20
ms
Turn−off Delay Time 90% V
in
to 90% I
D
R
L
= 4.7 W, V
in
= 10 to 0 V, V
DD
= 12 V
t
d(off)
− 32 50
ms
Turn−off Fall Time 90% I
D
to 10% I
D
R
L
= 4.7 W, V
in
= 10 to 0 V, V
DD
= 12 V
t
fall
− 27 50
ms
Slew−Rate On
R
L
= 4.7 W,
V
in
= 0 to 10 V, V
DD
= 12 V
−dV
DS
/dt
on
− 1.5 2.5
ms
Slew−Rate Off
R
L
= 4.7 W,
V
in
= 10 to 0 V, V
DD
= 12 V
dV
DS
/dt
off
− 0.6 1.0
ms
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Current Limit (V
GS
= 5.0 Vdc)
(V
GS
= 5.0 Vdc, T
J
= 150°C) (Note 4)
I
LIM
6.0
3.0
9.0
5.0
11
8.0
Adc
Current Limit (V
GS
= 10 Vdc)
(V
GS
= 10 Vdc, T
J
= 150°C) (Note 4)
I
LIM
7.0
4.0
10.5
7.5
13
10
Adc
Temperature Limit (Turn−off) (Note 4) V
GS
= 5.0 Vdc T
LIM(off)
150 175 200 °C
Temperature Hysteresis (Note 4) V
GS
= 5.0 Vdc
DT
LIM(on)
− 15 − °C
Temperature Limit (Turn−off) (Note 4) V
GS
= 10 Vdc T
LIM(off)
150 165 185 °C
Temperature Hysteresis (Note 4) V
GS
= 10 Vdc
DT
LIM(on)
− 15 − °C
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V
4. Not subject to production testing.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
P1-P3P4-P6

NIF62514T3G

Mfr. #:
Buy NIF62514T3G
Manufacturer:
ON Semiconductor
Description:
IC FET VOLT CLAMP 6A 40V SOT-223
Lifecycle:
New from this manufacturer.
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