APTGT400SK120G Datasheet APTGT400SK120G | P1-P3

APTGT400SK120G

APTGT400SK120G – Rev 2 October, 2012

www.microsemi.com

1-6

Absolute maximum ratings

* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature

greater than 100°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Q1

G1

0/VBUS

OUT

E1

CR2

VBUS

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C

560 *

I

C

Continuous Collector Current

T

C

= 80°C

400

I

CM

Pulsed Collector Current T

C

= 25°C 800

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

1785 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 800A @ 1100V

V

CES

= 1200V

I

C

= 400A @ Tc = 80°C

Application

 AC and DC motor control

 Switched Mode Power Supplies

Features

 Fast Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

- Symmetrical design

- M5 power connectors

 High level of integration

Benefits

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive TC of VCEsat

 Low profile

 RoHS Compliant

Buck chopper

Fast Trench + Field Stop IGBT3

P

ower Module

APTGT400SK120G

APTGT400SK120G – Rev 2 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 750 µA

T

j

= 25°C

1.4 1.7 2.1

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 400A

T

j

= 125°C

2.0

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 4 mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 800 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 28

C

oes

Output Capacitance 1.6

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

1.2

nF

T

d(on)

Turn-on Delay Time 260

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 420

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 400A

R

G

= 1.2

80

ns

T

d(on)

Turn-on Delay Time 290

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 520

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 400A

R

G

= 1.2

100

ns

E

on

Turn on Energy T

j

= 125°C 40

E

off

Turn off Energy

V

GE

= ±15V

V

Bus

= 600V

I

C

= 400A

R

G

= 1.2

T

j

= 125°C 40

mJ

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 700

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 125°C 900

µA

I

F

DC Forward Current

Tc = 80°C 400 A

T

j

= 25°C 1.6 2.1

V

F

Diode Forward Voltage

I

F

= 400A

V

GE

= 0V

T

j

= 125°C 1.6

V

T

j

= 25°C 170

t

rr

Reverse Recovery Time

T

j

= 125°C 280

ns

T

j

= 25°C 36

Q

rr

Reverse Recovery Charge

T

j

= 125°C 72

µC

T

j

= 25°C 20

E

r

Reverse Recovery Energy

I

F

= 400A

V

R

= 600V

di/dt =4000A/µs

T

j

= 125°C 36

mJ

APTGT400SK120G

APTGT400SK120G – Rev 2 October, 2012

www.microsemi.com

3-6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.07

R

thJC

Junction to Case Thermal Resistance

Diode 0.13

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque

For terminals M5 2 3.5

N.m

Wt Package Weight 300 g

SP6 Package outline (dimensions in mm)

See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTGT400SK120G

APTGT400SK120G

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