1SS307E,L3F

1SS307E
1
Switching Diodes Silicon Epitaxial Planar
1SS307E
1SS307E
1SS307E
1SS307E
Start of commercial production
2015-04
1.
1.
1.
1. Applications
Applications
Applications
Applications
General-Purpose Rectifiers
2.
2.
2.
2. Features
Features
Features
Features
(1) Very low reverse current. : I
R
= 10 nA (max)
(2) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
ESC
1: Cathode
2: Anode
2015-06-11
Rev.3.0
1SS307E
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
P
D
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
85
80
300
100
150
1
150
-55 to 150
Unit
V
mA
mW
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
5.
5.
5.
5. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
V
F
I
R
C
t
Test Condition
I
F
= 100 mA
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
Min
Typ.
0.9
2.0
Max
1.3
10
6.0
Unit
V
nA
pF
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2015-06-11
Rev.3.0
1SS307E
3
7.
7.
7.
7. Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Land Pattern Dimensions (for reference only)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 ESC (Unit: mm)
ESC (Unit: mm)
ESC (Unit: mm)
ESC (Unit: mm)
2015-06-11
Rev.3.0

1SS307E,L3F

Mfr. #:
Manufacturer:
Toshiba
Description:
Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet