APT33N90JCU3
APT33N90JCU3 – Rev 1 October 2012
www.microsemi.com
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS 0.43
R
thJC
Junction to Case Thermal Resistance
Diode 1.05
R
thJA
Junction to Ambient (IGBT & Diode) 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -40 150
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical CoolMOS performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10 12.5 15 17.5 20 22.5 25
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=600V
D=50%
R
G
=7.5Ω
T
J
=125°C
T
C
=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5 10152025303540
I
D
, Drain Current (A)
Eon and Eoff (mJ)
V
DS
=600V
R
G
=7.5Ω
T
J
=125°C
L=100µH
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain to Source ON resistance
(Normalized)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
4
5 101520253035
Gate Resistance (Ohms)
Switching Energy (mJ)
V
DS
=600V
I
D
=26A
T
J
=125°C
L=100µH
Source
Gate
Drain
Anode