MC74VHC14DR2

© Semiconductor Components Industries, LLC, 2011
May, 2011 Rev. 10
1 Publication Order Number:
MC74VHC14/D
MC74VHC14
Hex Schmitt Inverter
The MC74VHC14 is an advanced high speed CMOS Schmitt
inverter fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
Pin configuration and function are the same as the MC74VHC04 but
the inputs have hysteresis and, with its Schmitt trigger function, the
VHC14 can be used as a line receiver which will receive slow input
signals.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
High Speed: t
PD
= 5.5 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 2.0 mA (Max) at T
A
= 25°C
High Noise Immunity: V
NIH
= V
NIL
= 28% V
CC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: V
OLP
= 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 60 FETs or 15 Equivalent Gates
These Devices are PbFree and are RoHS Compliant
Figure 1. 14Lead Pinout (Top View)
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
L
H
FUNCTION TABLE
Inputs Outputs
A
H
L
Y
SOIC14
D SUFFIX
CASE 751A
TSSOP
DT SUFFIX
CASE 948G
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
1
14
VHC
14
ALYW
1
14
VHC14G
AWLYWW
A = Assembly Location
WL, L = Wafer Lot
Y = Year
WW, W = Work Week
G or = PbFree Package
MC74VHC14
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2
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
Figure 2. Logic Diagram
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage 0.5 to +7.0 V
V
IN
Digital Input Voltage 0.5 to +7.0 V
V
OUT
DC Output Voltage 0.5 to V
CC
+0.5 V
I
IK
Input Diode Current 20 mA
I
OK
Output Diode Current $20 mA
I
OUT
DC Output Current, per Pin $25 mA
I
CC
DC Supply Current, V
CC
and GND Pins $75 mA
P
D
Power Dissipation in Still Air SOIC
TSSOP
200
180
mW
T
STG
Storage Temperature Range 65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) $300 mA
q
JA
Thermal Resistance, JunctiontoAmbient SOIC
TSSOP
143
164
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Tested to EIA/JESD22A114A.
2. Tested to EIA/JESD22A115A.
3. Tested to JESD22C101A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage 0 V
CC
V
T
A
Operating Temperature Range, All Package Types 55 125 °C
t
r
, t
f
Input Rise or Fall Time V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
No limit
No limit
ns/V
MC74VHC14
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
V
T
A
= 25°C 55°C T
A
125°C
Unit
Min Typ Max Min Max
V
T+
Positive Threshold
Voltage (Figure 5)
3.0
4.5
5.5
2.20
3.15
3.85
2.20
3.15
3.85
V
V
T
Negative Threshold
Voltage (Figure 5)
3.0
4.5
6.0
0.9
1.35
1.65
0.90
1.35
1.65
V
V
H
Hysteresis Voltage
(Figure 5)
3.0
4.5
5.5
0.30
0.40
0.50
1.20
1.40
1.60
0.30
0.40
0.50
1.20
1.40
1.60
V
V
OH
Minimum HighLevel
Output Voltage
V
in
= V
IH
or V
IL
I
OH
= 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
V
V
in
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
V
OL
Maximum LowLevel
Output Voltage
V
in
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
I
in
Maximum Input
Leakage Current
V
in
= 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
in
= V
CC
or GND 5.5 2.0 20.0
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol Parameter Test Conditions
T
A
= 25°C 55°C T
A
125°C
Unit
Min Typ Max Min Max
t
PLH
,
t
PHL
Maximum Propagation
Delay,
A or B to Y
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
8.3
10.8
12.8
16.3
1.0
1.0
15.0
18.5
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
C
L
= 50 pF
5.5
7.0
8.6
10.6
1.0
1.0
10.0
12.0
C
in
Maximum Input
Capacitance
4 10 10 pF
C
PD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, V
CC
= 5.0 V
pF
21
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/ 6 (per buffer). C
PD
is used to determine the
noload dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns, C
L
= 50 pF, V
CC
= 5.0 V)
Symbol
Characteristic
T
A
= 25°C
Unit
Typ Max
V
OLP
Quiet Output Maximum Dynamic V
OL
0.4 0.8 V
V
OLV
Quiet Output Minimum Dynamic V
OL
0.4 0.8 V
V
IHD
Minimum High Level Dynamic Input Voltage 3.5 V
V
ILD
Maximum Low Level Dynamic Input Voltage 1.5 V

MC74VHC14DR2

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters 2-5.5V CMOS Hex
Lifecycle:
New from this manufacturer.
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