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2N6042

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1 Publication Order Number:
2N6040/D
PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium−power complementary silicon transistors are
designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain − h
FE
= 2500 (Typ) @ I
C
= 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
V
CEO(sus)
= 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage 2N6040
2N6043
2N6042
2N6045
V
CEO
60
100
Vdc
Collector−Base Voltage 2N6040
2N6043
2N6042
2N6045
V
CB
60
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current Continuous
Peak
I
C
8.0
16
Adc
Base Current I
B
120 mAdc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
75
0.60
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N604x = Device Code
x = 0, 2, 3, or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
www.onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 − 100 VOLTS, 75 WATTS
2N604xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
q
JC
1.67 °C/W
Thermal Resistance, Junction−to−Ambient
q
JA
57 °C/W
*ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0) 2N6040, 2N6043
2N6042, 2N6045
V
CEO(sus)
60
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0) 2N6040, 2N6043
(V
CE
= 100 Vdc, I
B
= 0) 2N6042, 2N6045
I
CEO
−
−
20
20
mA
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc) 2N6040, 2N6043
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc) 2N6042, 2N6045
(V
CE
= 60 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C) 2N6040, 2N6043
(V
CE
= 80 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C) 2N6041, 2N6044
(V
CE
= 100 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C) 2N6042, 2N6045
I
CEX
−
−
−
−
−
20
20
200
200
200
mA
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) 2N6040, 2N6043
(V
CB
= 100 Vdc, I
E
= 0) 2N6042, 2N6045
I
CBO
−
−
20
20
mA
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
− 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc) 2N6040, 2N6043,
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc) 2N6042, 2N6045
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc) All Types
h
FE
1000
1000
100
20.000
20,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 16 mAdc) 2N6040, 2N6043,
(I
C
= 3.0 Adc, I
B
= 12 mAdc) 2N6042, 2N6045
(I
C
= 8.0 Adc, I
B
= 80 Adc) All Types
V
CE(sat)
−
−
−
2.0
2.0
4.0
Vdc
Base−Emitter Saturation Voltage (I
C
= 8.0 Adc, I
B
= 80 mAdc) V
BE(sat)
− 4.5 Vdc
Base−Emitter On Voltage (I
C
= 4.0 Adc, V
CE
= 4.0 Vdc) V
BE(on)
− 2.8 Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz) |h
fe
| 4.0 −
Output Capacitance 2N6040/2N6042
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) 2N6043/2N6045
C
ob
−
−
300
200
pF
Small−Signal Current Gain (I
C
= 3.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz) h
fe
300 − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Indicates JEDEC Registered Data.
PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045
http://onsemi.com
3
80
0
0 20 40 60 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
40
20
60
140
T
C
4.0
0
2.0
1.0
3.0
T
A
T
A
T
C
Figure 2. Switching Times Equivalent Circuit
5.0
0.1
Figure 3. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.05
0.2 0.3 0.5 0.7 1.0 2.0 3.0 1
0
0.3
0.7
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0 V
V
2
approx
+8.0 V
V
1
approx
-12 V
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
R
B
51
D
1
+4.0 V
V
CC
-30 V
R
C
TUT
≈ 8.0 k
≈120
SCOPE
for t
d
and t
r
, D
1
is disconnected
and V
2
= 0
For NPN test circuit reverse all polarities and D1.
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
3.0
0.2
0.1
0.07
5.0 7.0
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
PNP
NPN
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100
0
500
q
JC
(t) = r(t) q
JC
q
JC
= 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.1
0.7
0.3
0.07
0.03
0.02 0.03 0.3 3.0 30 300
SINGLE PULSE
0.01
P1-P3P4-P6

2N6042

Mfr. #:
Buy 2N6042
Manufacturer:
Central Semiconductor
Description:
Darlington Transistors PNP Darl SW
Lifecycle:
New from this manufacturer.
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