IRLML6344TRPBF Datasheet IRLML6344TRPBF | P1-P3

HEXFET

®

Power MOSFET

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Application(s)

Micro3

TM

(SOT-23)

IRLML6344TRPbF

D

S

G

3

1

2

• Load/ System Switch

Features and Benefits

Benefits

V

DS

30 V

V

GS Max

± 12 V

R

DS(on) max

(@V

GS

= 4.5V)

29

mΩ

R

DS(on) max

(@V

GS

= 2.5V)

37

mΩ

Absolute Maximum Ratings

Symbol Parameter Units

V

DS

Drain-Source Voltage

V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

P

D

@T

A

= 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage V

T

J,

T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θ

JA

Junction-to-Ambient ––– 100

R

θ

JA

Junction-to-Ambient (t<10s)

––– 99

W

°C/W

A

Max.

5.0

4.0

-55 to + 150

± 12

0.01

30

1.3

0.8

25

Low R

DSon

(<29m

Ω

)

Lower Conduction Losses

Industry-standard SOT-23 Package Multi-vendor compatibility

RoHS compliant containing no lead, no bromide and no halogen

results in Environmentally friendly

MSL1, Consumer Qualification Increased Reliability

IRLML6344TRPbF

Form Quantity

IRLML6344TRPbF

Mic r o3

™

(SOT-23)

Tape and Reel

3000

IRLML6344TRPbF

Base Part Number

Package Type

Standard Pack

Orderable Part Number

IRLML6344TRPbF

D

S

G

Electric Characteristics @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

ΔV

(BR)DSS

/ΔT

J

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

––– 22 29

––– 27 37

V

GS(th)

Gate Threshold Voltage 0.5 0.8 1.1 V

I

DSS

––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

R

G

Internal Gate Resistance ––– 1.7 ––– Ω

gfs Forward Transconductance 19 ––– ––– S

Q

g

Total Gate Charge ––– 6.8 –––

Q

gs

Gate-to-Source Charge ––– 0.3 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 2.4 –––

t

d(on)

Turn-On Delay Time ––– 4.2 –––

t

r

Rise Time ––– 5.6 –––

t

d(off)

Turn-Off Delay Time ––– 22 –––

t

f

Fall Time ––– 9.1 –––

C

iss

Input Capacitance ––– 650 –––

C

oss

Output Capacitance ––– 65 –––

C

rss

Reverse Transfer Capacitance ––– 46 –––

Source - Drain Ratings and Characteristics

Symbol Parameter Min. Typ. Max. Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.2 V

t

rr

Reverse Recovery Time ––– 10 15 ns

Q

rr

Reverse Recovery Charge ––– 3.8 5.7 nC di/dt = 100A/μs

V

GS

= 12V

V

GS

= -12V

T

J

= 25°C, I

S

= 5.0A, V

GS

= 0V

integral reverse

p-n junction diode.

V

DS

= 10V, I

D

= 5.0A

I

D

= 5.0A

I

D

= 1.0A

T

J

= 25°C, V

R

= 15V, I

F

=1.3A

MOSFET symbol

showing the

V

DS

=15V

Conditions

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

R

G

= 6.8

Ω

V

GS

= 4.5V

Conditions

V

GS

= 0V, I

D

= 250μA

Reference to 25°C, I

D

= 1mA

V

GS

= 4.5V, I

D

= 5.0A

V

DS

= V

GS

, I

D

= 10μA

V

DS

=24V, V

GS

= 0V

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

R

DS(on)

V

GS

= 2.5V, I

D

= 4.0A

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current μA

mΩ

V

DD

=15V

nA

nC

ns

pF

A

1.3

25

––– –––

Notes  through  are on page 10

IRLML6344TRPbF

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

1.0 1.5 2.0 2.5

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

≤60μs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 5.0A

V

GS

= 4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤60μs PULSE WIDTH

Tj = 25°C

1.4V

VGS

TOP 10V

4.5V

2.5V

2.0V

1.9V

1.7V

1.5V

BOTTOM 1.4V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

1.4V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

4.5V

2.5V

2.0V

1.9V

1.7V

1.5V

BOTTOM 1.4V

IRLML6344TRPBF

IRLML6344TRPBF

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