CPDQC24VEU-HF
SMD ESD Protection Diode
Page 1
QW-G7XXX
REV:
Comchip Technology CO., LTD.
RoHS Device
Halogen Free
Comchip
S M D D i o d e S p e c i a l i s t
Company reserves the right to improve product design , functions and reliability without notice.
Features
- Uni-directional ESD protection.
- Surface mount package.
- Ultra small SMD package:0402.
- High component density.
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Conditions
Peak pulse power
PPP W
105
Operation temperature range
Tj
°C
Storage temperature range
TSTG
-55~+150
°C
ESD
kV
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
ESD capability
-55~+125
Symbol
Typ
Parameter
Min
Max
Unit
Conditions
Breakdown voltage
VBR V
IT = 1mA
26.5
Reverse leakage current
IR nA
VRWM = 24V
100
Clamping voltage
VC
V
34
IPP = 1A, TP = 8/20us
IPP = 2.5A, TP = 8/20us
42
32
V
Working peak reverse voltage
VRWM
24
Peak pulse current
IPP A
TP = 8/20us
2.5
TP = 8/20us
±25
Junction capacitance
35
CJ
pF
VR = 0V, f = 1MHz
Electrical Characteristics (at TA=25°C unless otherwise noted)
Forward voltage
VF V
IF = 10mA
0.8
Dimensions in inches and (millimeter)
0402C/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.022(0.55)
0.022(0.55)
0.018(0.45)
0.012(0.30)
0.008(0.20)
0.018(0.45)
0.001(0.02)
Max.
Mechanical data
- Case: 0402C/SOD-923F small outline plastic package.
molded plastic.
- Terminals: Matte tin plated, solderable per
MIL-STD-202,method 208.
- Mounting position: Any.
- Weight: 0.001 grams(approx.).
- High temperature soldering guaranteed:
260°C/10 second.
Circuit diagram
