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AN1102W-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
2010.03.30
Page 1
GaAlAs（DNK） GaAs（TAN,AN）
DNK
TAN
AN
ESD-withstand voltage
2kV (HBM)
□□1102W
Surface Mount IRED/Inner Lens Type
: 865nm
: 940nm
: 950nm
DNK
TAN
AN
: θx = 60 deg., θy= 80 deg.
: θx = 80 deg., θy= 90 deg.
: θx = 60 deg., θy= 90 deg.
Package
3015 type, Water clear epoxy
Product features
・Outer Dimension 3.0 x 1.5 x 1.5mm ( L x W x H )
・Inner Lenz type
・Radiant Intensity
DNK ： 2.2mW/sr TYP. (I
F
=20mA)
TAN ： 1.4mW/sr TYP. (I
F
=20mA)
AN ： 0.8mW/sr TYP. (I
F
=20mA)
・Lead–free soldering compatible
・RoHS compliant
Peak Wavelength
Half Intensity Angle
Die materials
Rank grouping parameter
Assembly method
Soldering methods Reflow soldering
※Please refer to Soldering Conditions about soldering.
Auto pick & place machine (Auto Mounter)
Sorted by radiant intensity per rank taping
2,500pcs per reel in a 8mm width tape. (Standard)
Reel diameter:φ180mm
Taping and reel
Recommended Applications
Car Audio, Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications
Features
2010.03.30
Page 2
□□1102W
Surface Mount IRED/Inner Lens Type
(Ta=25℃)
TYP. I
F
(mA) MIN. TYP. I
F
(mA)
DNK1102W GaAlAs 865 20 1.1 2.2 20
TAN1102W GaAs 940 20 0.7 1.4 20
AN1102W GaAs 950 20 0.5 0.8 20
Water
Clear
Part No. Material
I
E
(
ｍ
W/sr)
Lens
Color
Radiant Intensity
Peak
Wavelength
λ
ｐ
(nm)
Color and Luminous Intensity
2010.03.30
Page 3
□□1102W
Surface Mount IRED/Inner Lens Type
Conditions DNK TAN AN
TYP. 1.40 1.20 1.22
MAX. 1.65 1.40 1.40
Reverse Current V
R
=5V I
R
MAX. 100 10 10 μA
MIN. 1.1 0.7 0.5
TYP. 2.2 1.4 0.8
Total Output Power I
F
=20mA Po TYP. 8.5 5.7 2 mW
Peak Wavelength I
F
=20mA λ
p
TYP. 865 940 950 nm
Spectral Half-w idth I
F
=20mA
⊿
λ TYP. 45 50 45 nm
60(θx) 80(θx) 60(θx)
80(θy) 90(θy) 90(θy)
MIN.---
TYP. 50 - 0.5
Re spo nse Ti me I
F
=20mA tr/tf TYP. 7 1000 700 ns
Cut-off Frequency
I
F
=20mA
DC
±5mA,
-3db from 0.1MHz
fc
Half Intensity Angle I
F
=20mA 2θ1/2 TYP.
I
F
=20mA
deg.
MHz
I
E
Item
Symbol
V
mW/sr
Unit
Forward Voltage I
F
=20mA
Radiant Intensity
V
F
Characteristics
(Ta=25℃)
(Ta=25℃)
DNK TAN AN
Power Dissipation P
d
80 70 75 mW
Forward Current I
F
50 50 50 mA
Pulse Forward Current
※
1
I
FRM
300 300 300 mA
⊿
I
F
0.67 0.67 0.67 mA/
℃
⊿
I
FRM
4.00 4.00 4.00 mA/
℃
Reverse Voltage V
R
555V
Operating Temperature T
opr
℃
Storage Temperature T
stg
℃
Unit
Derating
(Ta=25
℃
or higher)
-30
～
+85
-40
～
+100
Absolute Maximum Ratings
Item Symbol
※1 I
FRM
Measurement condition : Pulse Width≦100μs, Duty≦1/100
Absolute Maximum Ratings
Electro-Optical Characteristics
※θx：Product long side axis,θｙ：Product short side axis
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

AN1102W-TR

Mfr. #:
Buy AN1102W-TR
Manufacturer:
Description:
EMITTER IR 950NM 50MA SMD
Lifecycle:
New from this manufacturer.
Delivery:
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