DMG4800LFG-7 Datasheet DMG4800LFG-7 | P1-P3

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

1 of 6

www.diodes.com

November 2009

DMG4800LFG

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: DFN3030-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - NiPdAu over Copper lead frame. Solderable

per MIL-STD-202, Method 208

• Polarity: See Diagram

• Marking Information: See Page 5

• Ordering Information: See Page 5

• Weight: 0.0172 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±25

V

Drain Current (Note 3) Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

7.44

4.82

A

Pulsed Drain Current (Note 4)

I

DM

40 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Total Power Dissipation (Note 3)

P

D

0.94 W

Thermal Resistance, Junction to Ambient

R

θ

JA

133 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

TOP VIEW

Internal Schematic

TOP VIEW

1

234

876

5

5678

4321

GSSS

D

BOTTOM VIEW

Pin Configuration

BOTTOM VIEW

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DMG4800LFG

Document number: DS31785 Rev. 3 - 2

2 of 6

www.diodes.com

November 2009

DMG4800LFG

NEW PRODUCT

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250A

Zero Gate Voltage Drain Current TJ = 25°C

I

DSS

- - 1.0

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS

(

th

)

0.8 - 1.5 V

V

DS

= V

GS

, I

D

= 250A

Static Drain-Source On-Resistance

R

DS (ON)

-

11

15

17

24

m

V

GS

= 10V, I

D

= 9A

V

GS

= 4.5V, I

D

= 7A

Forward Transfer Admittance

|Y

fs

|

- 8 - S

V

DS

= 10V, I

D

= 9A

Diode Forward Voltage

V

SD

- 0.7 1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

C

iss

- 798 -

pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 128 -

pF

Reverse Transfer Capacitance

C

rss

- 122 -

pF

Gate Resistance

R

g

- 1.37 -

Ω

V

DS

=0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

- 9.47 -

nC

V

GS

= 5V, V

DS

= 15V,

I

D

= 9A

Gate-Source Charge

Q

g

s

- 1.87 -

nC

Gate-Drain Charge

Q

g

d

- 5.60 -

nC

Turn-On Delay Time

t

D

(

on

)

- 5.03 -

ns

V

DD

= 15V, V

GEN

= 10V,

R

L

= 15, R

G

= 6, I

D

= 1A

Turn-On Rise Time

t

r

- 4.50 -

ns

Turn-Off Delay Time

t

D

(

off

)

- 26.33 -

ns

Turn-Off Fall Time

t

f

- 8.55 -

ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

0 0.5 1 1.5 2

0

5

10

15

20

30

I, D

R

AIN

C

U

R

EN

T

(A)

D

25

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 2.0V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 10V

GS

V = 2.5V

GS

I, D

R

AI

N

C

U

R

E

N

T

(A)

D

0

5

10

15

20

25

30

1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 5V

DS

DMG4800LFG

Document number: DS31785 Rev. 3 - 2

3 of 6

www.diodes.com

November 2009

DMG4800LFG

NEW PRODUCT

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 2.5V

GS

0

0.01

0.02

0.03

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = 4.5V

GS

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0.6

0.8

1.0

1.2

1.4

1.8

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DSON

1.6

V = 4.5V

I = 10A

GS

D

V = 10V

I = 11.6A

GS

D

0

0.005

0.01

0.015

0.02

0.025

0.03

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON

Ω

V = 10V

I = 11.6A

GS

D

V = 4.5V

I = 10A

GS

D

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

0

0.4

0.8

1.2

1.6

I = 250µA

D

I = 1mA

D

0

4

8

12

16

20

0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

DMG4800LFG-7

DMG4800LFG-7

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