APTM50DUM17G
APTM50DUM17G – Rev 3 October, 2012
www.microsemi.com
2
7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
GS
= 0V,V
DS
= 500V
T
j
= 25°C 400
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 400V T
j
= 125°C
2000
µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 90A
17 20
m
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 10mA 3 5 V
I
GSS
Gate – Source Leakage Current V
GS
= ±30 V, V
DS
= 0V ±200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance 28
C
oss
Output Capacitance 5.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.36
nF
Q
g
Total gate Charge 560
Q
gs
Gate – Source Charge 160
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 180A
280
nC
T
d(on)
Turn-on Delay Time 21
T
r
Rise Time 38
T
d(off)
Turn-off Delay Time 75
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 180A
R
G
= 0.5
93
ns
E
on
Turn-on Switching Energy 4140
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 180A,
R
G
= 0.5Ω
3380
µJ
E
on
Turn-on Switching Energy 6224
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 333V
I
D
= 180A,
R
G
= 0.5Ω
4052
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C
180
I
S
Continuous Source current
(Body diode)
Tc = 80°C
135
A
V
SD
Diode Forward Voltage V
GS
= 0V, I
S
= - 180A 1.3 V
dv/dt Peak Diode Recovery 8 V/ns
t
rr
Reverse Recovery Time 680 ns
Q
rr
Reverse Recovery Charge
I
S
= -180A, V
R
= 333V
di
S
/dt = 400A/µs
61 µC
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 180A di/dt 700A/µs V
R
V
DSS
T
j
150°C
