© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 4
1 Publication Order Number:
NE570/D
NE570
Compandor
The NE570 is a versatile low cost dual gain control circuit in which
either channel may be used as a dynamic range compressor or
expandor. Each channel has a full−wave rectifier to detect the average
value of the signal, a linerarized temperature−compensated variable
gain cell, and an operational amplifier.
The NE570 is well suited for use in cellular radio and radio
communications systems, modems, telephone, and satellite
broadcast/receive audio systems.
Features
Complete Compressor and Expandor in One IC
Temperature Compensated
Greater than 110 dB Dynamic Range
Operates Down to 6.0 V
DC
System Levels Adjustable with External Components
Distortion may be Trimmed Out
Pb−Free Packages are Available*
Applications
Cellular Radio
Telephone Trunk Comandor
High Level Limiter
Low Level Expandor − Noise Gate
Dynamic Noise Reduction Systems
Voltage−Controlled Amplifier
Dynamic Filters
MAXIMUM RATINGS
Rating Symbol Value Unit
Maximum Operating Voltage V
CC
24 V
DC
Operating Ambient Temperature Range T
A
0 to +70 °C
Operating Junction Temperature T
J
150 °C
Power Dissipation P
D
400 mW
Thermal Resistance, Junction−to−Ambient
R
q
JA
105 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DG CELL IN
RECT IN
V
REF
1.8 V
THD TRIM
RECT CAP
INVERTER IN
OUTPUT
+
R
2
20 kW
R
1
10 kW
VARIABLE
GAIN
30 kW
20 kW
Figure 1. Block Diagram
RECTIFIER
R
3
R
3
R
4
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
(Top View)
SOIC−16 WB
D SUFFIX
CASE 751G
RECT_IN_1
RECT_CAP_2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
RECT_CAP_1
DG_CELL_IN_1
INV_IN_1
GND
RES_R3_1
OUTPUT_1
THD_TRIM_1
RECT_IN_2
DG_CELL_IN_
2
V
CC
INV_IN_2
RES_R3_2
OUTPUT_2
THD_TRIM_2
1
MARKING
DIAGRAM
16
1
NE570D
AWLYYWWG
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
Plastic Small Outline Package
;
16 Leads; Body Width 7.5 mm
NE570
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2
PIN FUNCTION DESCRIPTION
Pin Symbol Description
1 RECT CAP 1 External Capacitor Pinout for Rectifier 1
2 RECT IN 1 Rectifier 1 Input
3
DG CELL IN 1
Variable Gain Cell 1 Input
4 GND Ground
5 INV. IN 1 Inverted Input 1
6 RES. R3 1 R3 Pinout 1
7 OUTPUT 1 Output 1
8 THD TRIM 1 Total Harmonic Distortion Trim 1
9 THD TRIM 2 Total Harmonic Distortion Trim 2
10 OUTPUT 2 Output 2
11 RES. R3 2 R3 Pinout 2
12 INV. IN 2 Inverted Input 2
13 V
CC
Positive Power Supply
14
DG CELL IN 2
Variable Gain Cell 2 Input
15 RECT IN 2 Rectifier 2 Input
16 RECT CAP 2 External Capacitor Pinout for Rectifier 2
ELECTRICAL CHARACTERISTICS V
CC
= +15 V, T
A
= 25 °C; unless otherwise stated.
Characteristic Test Conditions Symbol Min Typ Max Unit
Supply Voltage V
CC
6.0 24 V
Supply Current No Signal I
CC
4.3 4.8 mA
Output Current Capability I
OUT
±20 mA
Output Slew Rate SR ±0.5
V/ms
Gain Cell Distortion (Note 1)
Untrimmed 0.3 1.0 %
Trimmed 0.05 %
Resistor Tolerance ±5 ±15 %
Internal Reference Voltage 1.7 1.8 1.9 V
Output DC Shift (Note 2) Untrimmed ±90 ±150 mV
Expandor Output Noise No signal, 15 Hz to 20 kHz
(Note 3)
20 45
mV
Unity Gain Level (Note 4) −1.0 0 +1.0 dBm
Gain Change (Notes 1 and 5) T
A
= 0°C to +70°C ±0.1 ±0.2 dB
Reference Drift (Note 5) T
A
= 0°C to +70°C ±5.0 ±10 mV
Resistor Drift (Note 5) T
A
= 0°C to +70°C +8.0, −5.0 %
Tracking Error (measured relative to value at unity gain)
equals [V
O
− V
O
(unity gain)] dB − V
2
dBm
Rectifier Input V
CC
= +6.0 V
V
2
= +6.0 dBm, V
1
= 0 dB
V
2
= −30 dBm, V
1
= 0 dB
±0.2
+0.2
0.5, +1.0
dB
dB
Channel Separation 60 dB
1. Measured at 0 dBm, 1.0 kHz.
2. Expandor AC input change from no signal to 0 dBm.
3. Input to V
1
and V
2
grounded.
4. 0 dB = 775 mV
RMS
.
5. Relative to value at T
A
= 25°C.
NE570
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3
CIRCUIT DESCRIPTION
The NE570 compandor building blocks, as shown in the
block diagram, are a full−wave rectifier, a variable gain cell,
an operational amplifier and a bias system. The arrangement
of these blocks in the IC result in a circuit which can perform
well with few external components, yet can be adapted to
many diverse applications.
The full−wave rectifier rectifies the input current which
flows from the rectifier input, to an internal summing node
which is biased at V
REF
. The rectified current is averaged on
an external filter capacitor tied to the C
RECT
terminal, and
the average value of the input current controls the gain of the
variable gain cell. The gain will thus be proportional to the
average value of the input signal for capacitively−coupled
voltage inputs as shown in the following equation. Note that
for capacitively−coupled inputs there is no offset voltage
capable of producing a gain error. The only error will come
from the bias current of the rectifier (supplied internally)
which is less than 0.1 mA.
G T
|V
IN
* V
REF
|avg
R
1
or
G T
|V
IN
|avg
R
1
The speed with which gain changes to follow changes in
input signal levels is determined by the rectifier filter
capacitor. A small capacitor will yield rapid response but
will not fully filter low frequency signals. Any ripple on the
gain control signal will modulate the signal passing through
the variable gain cell. In an expander or compressor
application, this would lead to third harmonic distortion, so
there is a trade−off to be made between fast attack and decay
times and distortion. For step changes in amplitude, the
change in gain with time is shown by this equation.
t + 10kW C
RECT
G(t) + (G
initial
* G
final
)e
*t
t
) G
final
The variable gain cell is a current−in, current−out device
with the ratio I
OUT
/I
IN
controlled by the rectifier. I
IN
is the
current which flows from the DG input to an internal
summing node biased at V
REF
. The following equation
applies for capacitively−coupled inputs. The output current,
I
OUT
, is fed to the summing node of the op amp.
I
IN
+
V
IN
* V
REF
R
2
+
V
IN
R
2
A compensation scheme built into the DG cell
compensates for temperature and cancels out odd harmonic
distortion. The only distortion which remains is even
harmonics, and they exist only because of internal offset
voltages. The THD trim terminal provides a means for
nulling the internal offsets for low distortion operation.
The operational amplifier (which is internally
compensated) has the non−inverting input tied to V
REF
, and
the inverting input connected to the DG cell output as well
as brought out externally. A resistor, R
3
, is brought out from
the summing node and allows compressor or expander gain
to be determined only by internal components.
The output stage is capable of ±20 mA output current.
This allows a +13 dBm (3.5 V
RMS
) output into a 300 W load
which, with a series resistor and proper transformer, can
result in +13 dBm with a 600 W output impedance.
A bandgap reference provides the reference voltage for all
summing nodes, a regulated supply voltage for the rectifier
and DG cell, and a bias current for the DG cell. The low
tempco of this type of reference provides very stable biasing
over a wide temperature range.
The typical performance characteristics illustration
shows the basic input−output transfer curve for basic
compressor or expander circuits.
+20
+10
0
−10
−20
−30
−40
−50
−60
−70
−80
−40 −30 −20 −10 0 +10
COMPRESSOR OUTPUT LEVEL
OR
EXPANDOR INPUT LEVEL (dBm)
COMPRESSOR INPUT LEVEL OR EXPANDOR OUTPUT LEVEL (dBm)
Figure 2. Basic Input−Output Transfer Curve

NE570DG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Audio Amplifiers Dual Gain Compandor Commercial Temp
Lifecycle:
New from this manufacturer.
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