VUO110-18NO7
0.001 0.01 0.1 1
400
600
800
1000
23456789
1
10
3
10
4
0 1020304050
0
10
20
30
40
50
0 25 50 75 100 125 150 175
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
[A
2
s]
I
FSM
[A]
t[s]
P
tot
[W]
I
FAV
[A]
T
amb
[°C]
t[ms]
0 25 50 75 100 125 150
0
40
80
120
160
I
FAVM
[A]
Z
thJC
[K/W]
50Hz, 80% V
RRM
T
VJ
= 150°C
0.5 1.0 1.5
0
40
80
120
160
200
I
F
[A]
V
F
[V]
T
VJ
=45°C
T
VJ
= 150°C
T
VJ
=45°C
T
VJ
=125°C
T
VJ
= 25°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
t[ms]
Fig. 3 I
2
tvs.timeperdiode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
R
i
t
i
0.100 0.020
0.010 0.010
0.162 0.225
0.258 0.800
0.170 0.580
R
thA
:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
0.8 x V
RRM
50 Hz
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
Rectifier
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20130410bData according to IEC 60747and per semiconductor unless otherwise specified
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