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SI3586DV-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
Vishay Siliconix
Si3586DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.1
1
10
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A) I
S
- 0.4
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
- 50 - 25 0 2 5 5 0 7 5 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.05
0.10
0.15
0.20
0.25
012345
I
D
= 3.4 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
Safe Operating Area, Junction-to-Case
10
0.1
0.1 1 10 100
0.01
1 ms
1
R *
Limited by
DS(on)
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
1 s, 10 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
www.vishay.com
5
Vishay Siliconix
Si3586DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1 10 60010
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 130 °C/W
3. T
JM
T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
-
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
www.vishay.com
6
Document Number: 72310
S09-2110-Rev. D, 12-Oct-09
Vishay Siliconix
Si3586DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
1
2
3
4
5
6
7
8
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 5 V thru 2.5 V
2 V
1.5 V
0.00
0.15
0.30
0.45
0.60
0.75
012345678
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 4.5 V
V
GS
= 2.5 V
0.0
1.3
2.6
3.9
5.2
6.5
0123456
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
I
D
= 2.5 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= - 55 °C
125 °C
25 °C
0
130
260
390
520
650
048121620
V
DS
- Drain-to-Source Voltage (V)
C
- Capacitance (pF)
C
oss
C
iss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS
= 4.5 V
I
D
= 2.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
P1-P3P4-P6P7-P9

SI3586DV-T1-GE3

Mfr. #:
Buy SI3586DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
Lifecycle:
New from this manufacturer.
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