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IPD50N08S413ATMA1
P1-P3
P4-P6
P7-P9
IPD50N08S4-13
OptiMOS
™
-T2 Pow
er-Transistor
Features
• N-channel - Enhancement m
ode
• AEC Q101 quali
fied
• MSL1 up to 260
°C peak reflow
• 175°C operating te
mperature
• Green Product (RoHS compliant)
• 100% Avalan
che tested
Maximum ratin
gs,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=10V
50
A
T
C
=100°C,
V
GS
=10V
2)
50
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
200
Avalanche energy
,
single pulse
2)
E
AS
I
D
=25A
76
mJ
Avalanche current, single p
ulse
I
AS
-
31
A
Gate source voltage
V
GS
-
±20
V
Power dissipati
on
P
tot
T
C
=25°C
72
W
Operating and storage temperature
T
j
,
T
stg
-
-55 ... +175
°C
Value
V
DS
80
V
R
DS(on),max
13.2
m
W
I
D
50
A
Product Summary
PG-TO
252-3-313
Type
Package
Marking
IPD50N08S4-13
PG-
TO252-3-313
4N0813
Rev. 1.0
page 1
2014-06-30
IPD50N08S4-13
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
Therm
al resistance, junction - case
R
thJC
-
-
-
2.1
K/W
SMD version, devi
ce on PCB
R
thJA
minim
al footprint
-
-
62
6 cm
2
cooling area
3)
-
-
40
Electrical characteris
tics,
at
T
j
=25 °C, unless otherw
ise specified
Static characteristics
Drain-source break
down v
oltage
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
80
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=33µA
2.0
3.0
4.0
Zero gate voltage d
rain current
I
DSS
V
DS
=80V,
V
GS
=0V,
T
j
=25°C
-
0.01
1
µA
V
DS
=80V,
V
GS
=0V,
T
j
=125°C
2)
-
5
100
Gate-source leakage cur
rent
I
GSS
V
GS
=20V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V,
I
D
=50A
-
11.2
13.2
m
W
Values
Rev. 1.0
page 2
2014-06-30
IPD50N08S4-13
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
1316
1711
pF
Output capacitance
C
oss
-
511
664
Reverse transfer capacitance
C
rss
-
29
58
Turn-on delay
time
t
d(on)
-
5.0
-
ns
Rise time
t
r
-
3.6
-
Turn-of
f delay
time
t
d(off)
-
6.4
-
Fall time
t
f
-
11.8
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
6.9
9.0
nC
Gate to drain charge
Q
gd
-
4.5
9
Gate charge total
Q
g
-
19
30
Gate plateau vol
tage
V
plateau
-
5.0
-
V
Reverse Diode
Diode continous forward current
2)
I
S
-
-
50
A
Diode pulse current
1)
I
S,pulse
-
-
200
Diode forward voltag
e
V
SD
V
GS
=0V,
I
F
=50A,
T
j
=25°C
-
0.9
1.3
V
Reverse recovery
time
1)
t
rr
V
R
=50V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/µs
-
74
-
ns
Reverse recovery
charge
1)
Q
rr
-
49
-
nC
Values
V
GS
=0V,
V
DS
=25V,
f
=1MHz
V
DD
=40V,
V
GS
=10V,
I
D
=50A,
R
G
=3.5
W
V
DD
=64V,
I
D
=50A,
V
GS
=0 to 10V
3)
Device on 40
mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm
2
(one layer, 7
0 µm thick
) copper are
a for drain
connec
tion. PCB is verti
cal in s
till air.
1)
Current is l
imited b
y bondwire; with an
R
thJC
= 2.1K/W
the chip
is able
to carry 85A at
25°C.
T
C
=25°C
2)
Specifie
d by design.
Not subjec
t to produc
tion tes
t.
Rev. 1.0
page 3
2014-06-30
P1-P3
P4-P6
P7-P9
IPD50N08S413ATMA1
Mfr. #:
Buy IPD50N08S413ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 75/80V
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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IPD50N08S413ATMA1