1999 Apr 12 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BC859W; BC860W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − − −15 nA
I
E
= 0; V
CB
= −30 V; T
j
= 150 °C − − −4 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −5 V − − −100 nA
h
FE
DC current gain I
C
= −2 mA; V
CE
= −5 V;
see
Figs 2 and 3
BC859W; BC860W 220 − 800
BC859BW; BC860BW 220 − 475
BC859CW; BC860CW 420 − 800
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −0.5 mA − − −300 mV
I
C
= −100 mA; I
B
= −5 mA; note 1 − − −650 mV
V
BE
base-emitter voltage I
C
= −2 mA; V
CE
= −5 V 600 − 750 mV
I
C
= −10 mA; V
CE
= −5 V − − 820 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − − 5 pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= −500 mV; f = 1 MHz − 10 − pF
f
T
transition frequency I
C
= −10 mA; V
CE
= −5 V; f = 100 MHz 100 − − MHz
F noise figure;
BC859W;
BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 10 Hz to 15.7 kHz
− − 4 dB
I
C
= −200 μA; V
CE
= −5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− − 4 dB
