NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF909; BF909R
FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN SYMBOL DESCRIPTION
1 s, b source
2 d drain
3g
2
gate 2
4g
1
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
BF909 marking code: %M3.
handbook, halfpage
43
21
Top view
MAM124
s,b
d
g
1
g
2
Fig.2 Simplified outline (SOT143R) and symbol.
BF909R marking code: %M4.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g
1
g
2
34
12
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
drain-source voltage −−7V
I
D
drain current −−40 mA
P
tot
total power dissipation −−200 mW
T
j
operating junction temperature −−150 °C
y
fs
forward transfer admittance 36 43 50 mS
C
ig1-s
input capacitance at gate 1 − 3.6 4.3 pF
C
rs
reverse transfer capacitance f = 1 MHz − 35 50 fF
F noise figure f = 800 MHz − 2 2.8 dB
Rev. 02 - 19 November 2007
