SIHG25N40D-GE3 Datasheet SIHG25N40D-E3, SIHG25N40D-GE3 | P1-P3

SiHG25N40D

www.vishay.com

Vishay Siliconix

S12-0625-Rev. B, 26-Mar-12

1

Document Number: 91484

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

on

x Q

g

- Fast Switching

• Compliant to RoHS Directive 2011/65/EU

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

•Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

•SMPS

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.3 mH, R

g

= 25 , I

AS

= 17 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 450

R

DS(on)

max. at 25 °C ()V

GS

= 10 V 0.17

Q

g

max. (nC) 88

Q

gs

(nC) 12

Q

gd

(nC) 23

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free SiHG25N40D-E3

Lead (Pb)-free and Halogen-free SiHG25N40D-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

400

V

Gate-Source Voltage

V

GS

± 30

Gate-Source Voltage AC (f > 1 Hz) 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

25

AT

C

= 100 °C 16

Pulsed Drain Current

a

I

DM

78

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energyb E

AS

556 mJ

Maximum Power Dissipation P

D

278 W

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dtd 0.6

Soldering Recommendations (Peak Temperature) for 10 s 300

c

°C

SiHG25N40D

www.vishay.com

Vishay Siliconix

S12-0625-Rev. B, 26-Mar-12

2

Document Number: 91484

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-0.45

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 400 - - V

V

DS

Temperature Coefficient

V

DS

/T

J

Reference to 25 °C, I

D

= 250 μA

-0.5-

V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3 - 5 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 400 V, V

GS

= 0 V - - 1

μA

V

DS

= 320 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 13 A - 0.14 0.17 

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 13 A - 7.4 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 1707 -

pF Output Capacitance C

oss

- 177 -

Reverse Transfer Capacitance C

rss

-19-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 13 A, V

DS

= 320 V

-4488

nC Gate-Source Charge Q

gs

-12-

Gate-Drain Charge Q

gd

-23-

Turn-On Delay Time t

d(on)

V

DD

= 320 V, I

D

= 13 A,

V

GS

= 10 V, R

g

= 24.6 

-2142

ns

Rise Time t

r

-5786

Turn-Off Delay Time t

d(off)

-4080

Fall Time t

f

-3774

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.8 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--24

A

Pulsed Diode Forward Current I

SM

--78

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 13 A, V

GS

= 0 V - - 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 13 A,

dI/dt = 100 A/μs, V

R

= 20 V

- 353 - ns

Reverse Recovery Charge Q

rr

-4.4-μC

Reverse Recovery Current I

RRM

-24-A

S

D

G

SiHG25N40D

www.vishay.com

Vishay Siliconix

S12-0625-Rev. B, 26-Mar-12

3

Document Number: 91484

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

0 5 10 15 20 25 30

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

T

J

= 25 °C

20

40

60

80

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

10

20

30

40

50

60

0 5 10 15 20 25 30

T

J

= 150 °C

5 V

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

BOTTOM 6 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

20

40

60

80

100

0 5 10 15 20

25

T

J

= 25 °C

T

J

= 150 °C

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20

0

20 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

V

GS

= 10 V

I

D

= 13 A

V

DS

, Drain-to-Source Voltage (V)

Capacitance (pF)

100

10

10 000

1

1000

0 100 200 300 400

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

iss

C

oss

C

rss

Q

g

, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0

24

20

12

8

0 20 40 60 80

10 30 50 70

V

DS

= 320 V

V

DS

= 200 V

V

DS

= 80 V

SIHG25N40D-GE3

SIHG25N40D-GE3

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