HSMS-281C-BLKG

HSMS-281x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specically designed for both
analog and digital applications. This series oers a wide
range of specications and package congurations to
give the designer wide exibility. The HSMS‑281x series of
diodes features very low icker (1/f) noise.
Note that Avagos manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Package Lead Code Identication, SOT-23/SOT-143
(Top View)
COMMON
CATHODE
#4
UNCONNECTED
PAIR
#5
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
1 2
3
1 2
3 4
RING
QUAD
#7
1 2
3 4
BRIDGE
QUAD
#8
1 2
3 4
1 2
3
1 2
3
1 2
3
Package Lead Code Identication, SOT-323
(Top View)
Package Lead Code Identication, SOT-363
(Top View)
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
COMMON
CATHODE QUAD
M
UNCONNECTED
TRIO
L
BRIDGE
QUAD
P
COMMON
ANODE QUAD
N
RING
QUAD
R
1 2 3
6 5 4
HIGH ISOLATION
UNCONNECTED PAIR
K
1 2 3
6 5 4
1 2 3
6 5 4
1 2 3
6 5 4
1 2 3
6 5 4
1 2 3
6 5 4
Notes:
1.
Package marking provides orientation and identication.
2. See “Electrical Specications” for appropriate package marking.
Pin Connections and Package Marking
Features
Surface Mount Packages
Low Flicker Noise
Low FIT (Failure in Time) Rate*
Six‑sigma Quality Level
Single, Dual and Quad Versions
Tape and Reel Options Available
Lead‑free
For more information see the Surface Mount Schottky
Reliability Data Sheet.
GUx
1
2
3
6
5
4
2
Electrical Specications T
C
= 25°C, Single Diode
[3]
Maximum Maximum
Minimum Maximum Forward Reverse Typical
Part Package Breakdown Forward Voltage Leakage Maximum Dynamic
Number Marking Lead Voltage Voltage V
F
(V) @ I
R
(nA) @ Capacitance Resistance
HSMS
[4]
Code Code Conguration V
BR
(V) V
F
(mV) I
F
(mA) V
R
(V) C
T
(pF) R
D
(Ω)
[5]
2810 B0 0 Single 20 410 1.0 35 200 15 1.2 15
2812 B2 2 Series
2813 B3 3 Common Anode
2814 B4 4 Common Cathode
2815 B5 5 Unconnected Pair
2817 B7 7 Ring Quad
[4]
2818 B8 8 Bridge Quad
[4]
281B B0 B Single
281C B2 C Series
281E B3 E Common Anode
281F B4 F Common Cathode
281K BK K High Isolation
Unconnected Pair
281L BL L Unconnected Trio
Test Conditions I
R
= 10 mA I
F
= 1 mA V
F
= 0 V I
F
= 5 mA
f = 1 MHz
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363
I
f
Forward Current (1 μs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V Same as V
BR
Same as V
BR
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C ‑65 to 150 ‑65 to 150
θ
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is dened to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Notes:
1. V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Eective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.
5. R
D
= R
S
+ 5.2 Ω at 25°C and I
f
= 5 mA.
3
Quad Capacitance
Capacitance of Schottky diode quads is measured using
an HP4271 LCR meter. This instrument eectively isolates
individual diode branches from the others, allowing ac‑
curate capacitance measurement of each branch or each
diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz.
Avago denes this measurement as “CM”, and it is equiva‑
lent to the capacitance of the diode by itself. The equiva‑
lent diagonal and adjacent capaci‑tances can then be cal‑
culated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance be‑
tween points A and B as shown in the gure below. The
diagonal capacitance is calculated using the following
formula
C
j
R
j
R
S
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit Model Diode Chip
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
SPICE Parameters
Parameter Units HSMS-281x
B
V
V 25
C
J0
pF 1.1
E
G
eV 0.69
I
BV
A E‑5
I
S
A 4.8E‑9
N 1.08
R
S
Ω 10
P
B
V 0.65
P
T
2
M 0.5
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
1
C
ADJACENT
= C
1
+ ____________
1 1 1
–– + –– + ––
C
2
C
3
C
4
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
1
C
ADJACENT
= C
1
+ ____________
1 1 1
–– + –– + ––
C
2
C
3
C
4
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
The equivalent adjacent capacitance is the capacitance
between points A and C in the gure below. This capaci‑
tance is calculated using the following formula
This information does not apply to cross‑over quad di‑
odes.

HSMS-281C-BLKG

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
Schottky Diodes & Rectifiers 20 VBR 1.2 pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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