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DMG3414UQ-7

P1-P3P4-P6
DMG3414UQ
Document number: DS37624 Rev. 2 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMG3414U
Q
NEW PR O D U C T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
20V
25mΩ @ V
GS
= 4.5V
9A
29mΩ @ V
GS
= 2.5V
5.5A
37mΩ @ V
GS
= 1.8V
4.8A
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
• Power Management Functions
• DC-DC Converters
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (Approximate)
Ordering Information
(Note 5)
Part Number
Case
DMG3414UQ-7 SOT23 3,000/Tape & Reel
DMG3414UQ-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
20
20
2021
Code
W X Y Z A B C D E F G H I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
TOP VIEW
I
nternal Schematic
TOP VIEW
D
G
S
Source
Gate
Drain
MN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
MN8
YM
SOT23
SOT23
DMG3414UQ
Document number: DS37624 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMG3414U
Q
NEW PR O D U C T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.2
3.2
A
Pulsed Drain Current (Note 7)
I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
P
D
0.78 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C R
θJA
162 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
1.0 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5
0.9 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
19 25
mΩ
V
GS
= 4.5V, I
D
= 8.2A
22 29
V
GS
= 2.5V, I
D
= 3.3A
28 37
V
GS
= 1.8V, I
D
= 2.0A
Forward Transfer Admittance
|Y
fs
|
7
S
V
DS
= 10V, I
D
= 4A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
829.9
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
85.3
pF
Reverse Transfer Capacitance
C
rss
81.2
pF
Total Gate Charge
Q
g
9.6
nC
V
GS
= 4.5V, V
DS
= 10V, I
D
= 8.2A
Gate-Source Charge
Q
gs
1.5
nC
Gate-Drain Charge
Q
gd
3.5
nC
Turn-On Delay Time
t
D(on)
8.1
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10Ω, R
G
= 6Ω, I
D
= 1A
Turn-On Rise Time
t
r
8.3
ns
Turn-Off Delay Time
t
D(off)
40.1
ns
Turn-Off Fall Time
t
f
9.6
ns
Notes: 6. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG3414UQ
Document number: DS37624 Rev. 2 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMG3414U
Q
NEW PR O D U C T
0
5
10
15
20
25
0 0.2 0.4 0.6 0.8 1 1.2 1.4
1.6
1.8
2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 1.5V
GS
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
0.5
1
1.5
2
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
4
8
12
16
20
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
0
4
8
12
16
20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.03
0.04
0.05
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.8
R
,
D
R
A
I
N
-
S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
1.6
V = 4.5V
I = 6.5A
GS
D
V = 2.5V
I = 5A
GS
D
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
0.04
0.05
R
,
D
R
A
I
N
-
S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 6.5A
GS
D
V = 2.5V
I = 5A
GS
D
P1-P3P4-P6

DMG3414UQ-7

Mfr. #:
Buy DMG3414UQ-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V
Lifecycle:
New from this manufacturer.
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