MBR8020R

V
RRM
= 20 V - 100 V
I
F
= 80 A
Features
• High Surge Capability DO-5 Package
• Types up to 100 V V
RRM
Parameter Symbol MBR8020 (R) MBR8030 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20 30 V
Conditions
40
MBR8020 thru MBR8040R
MBR8040 (R)
35
MBR8035 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
pp g
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
80 80 A
Operating temperature
T
j
-65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MBR8020 (R) MBR8030(R) Unit
Diode forward voltage 0.65 0.65
55
250 250
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
-65 to 150 -65 to 150
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
-65 to 175
MBR8040 (R)
55
MBR8035 (R)
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.65 0.65
250
mA
V
V
R
= 20 V, T
j
= 25 °C
I
F
= 80 A, T
j
= 25 °C
T
C
120 °C
Conditions
25
1000 1000
-65 to 175
80 80
1000
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
250
A1000
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1
MBR8020 thru MBR8040R
www.genesicsemi.com
2

MBR8020R

Mfr. #:
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 20V - 80A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union