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MMBT3904-7-F

P1-P2
DS30036 Rev. E-2 1 of 2 MMBT3904
MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·
Epitaxial Planar Die Construction
·
Complementary PNP Type Available
(MMBT3906)
·
Ideal for Medium Power Amplification and
Switching
Characteristic Symbol MMBT3904 Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
6.0 V
Collector Current - Continuous (Note 1)
I
C
200 mA
Power Dissipation (Note 1)
P
d
350
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
qJA
357 K/W
Operating and Storage and Temperature Range
T
j
,T
STG
-55 to +150 °C
Features
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
·
Case: SOT-23, Molded Plastic
·
Terminals: Solderable per MIL-STD-202,
Method 208
·
Terminal Connections: See Diagram
·
Marking: K1N, R1A, 1AM
·
Weight: 0.008 grams (approx.)
SOT-23
Dim Min Max
A
0.37 0.51
B
1.19 1.40
C
2.10 2.50
D
0.89 1.05
E
0.45 0.61
G
1.78 2.05
H
2.65 3.05
J
0.013 0.15
K
0.89 1.10
L
0.45 0.61
M
0.076 0.178
All Dimensions in mm
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30036 Rev. E-2 2 of 2 MMBT3904
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
60 ¾ V
I
C
= 10mA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40 ¾ V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0 ¾ V
I
E
= 10mA, I
C
= 0
Collector Cutoff Current
I
CEX
¾ 50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
¾ 50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
40
70
100
60
30
¾
¾
300
¾
¾
¾
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
¾
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base- Emitter Saturation Voltage
V
BE(SAT)
0.65
¾
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
¾ 4.0 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
¾ 8.0 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 10 kW
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
h
re
0.5 8.0 x 10
-4
Small Signal Current Gain
h
fe
100 400 ¾
Output Admittance
h
oe
1.0 40 mS
Current Gain-Bandwidth Product
f
T
300 ¾ MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure
NF ¾ 5.0 dB
V
CE
= 5.0V, I
C
= 100mA,
R
S
= 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
¾ 35 ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Rise Time
t
r
¾ 35 ns
Storage Time
t
s
¾ 200 ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
t
f
¾ 50 ns
Notes: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
P1-P2

MMBT3904-7-F

Mfr. #:
Buy MMBT3904-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 40V NPN SS Trans 60Vceo 6Vebo 200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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