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MTM763200LBF

P1-P3P4-P6P7-P9
Product Standards
MOS FET
MTM763200LBF
Basic Part Number
Nch+Pch MOS 20V
(
Individual
)
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Absolute Maximum Ratings Ta = 25 C
Peak drain current
Peak drain current
Total
p
ower dissi
p
ation
*1
Channel temperature
Operating ambient temperature
Storage Temperature Range
Note *1 Measuring on ceramic substrate at 40 mm 38 mm 0.2 mm.
PD absolute maximum rating Non-heat sink: 150 mW.
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Page
to
Tch
FET2
(P-ch.)
Overall
Drain-source Voltage
Gate-source Voltage
Drain current
A
-7 A
Tstg
-55 to
°C
-40
°C150
mW
+150
+85
PD
700
Topr
RDS(on)typ. N-ch = 80 m（VGS = 4.0 V) P-ch:100 m
(VGS = -4.0 V)
Symbol Rating Unit
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
pcs / reel (standard)
Parameter
Embossed type (Thermo-compression sealing)
FET1
(N-ch.)
ID
IDp
Drain-source Voltage
Gate-source Voltage
Drain current
1.9
12
-20
IDp
VDS
ID
-1.2
Halogen-free / RoHS compliant
Marking Symbol
JB
Packaging
V
°C
3 000
A
VDS
20
VGS
VGS
10
V
Internal
C
onnection
V
A
of 8
Unit : mm
WSMini6-F1-B
SC-113DA
Code
JEITA
―
Panasonic
Pin Name
1
MTM763200LBF
Features
Low Drain-source On-state Resistance :
Silicon N-channel MOSFET (FET1)
Silicon P-channel MOSFET (FET2)
For Switching
For DC-DC Converter
10
V
2.1
2.0
0.7
1.7
0.130.2
1.3
(0.65)(0.65)
12
456
3
3
(D2)
(S2)
4
1
(S1)
2
(G1)
(D1)
6
(G2)
5
FET1
FET2
Doc No.
TT4-EA-10567
Revision.
Established
:
2008-03-07
Revised
:
2013-10-17
Product Standards
MOS FET
MTM763200LBF
Electrical Characteristics Ta = 25 C 3 C
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. *1 Pulse measurement
*2 Measurement circuit for Turn-on Time / Turn-off Time
Page
Reverse Transfer Capacitance
Drain-source ON resistance
*1
Forward transfer admittance
*1
Output Capacitance
Turn-on time
*2
Turn-off time
*2
12
50
ton
toff
105
ID = 1.0 A
VDD = 10 V, VGS = 0 to 4 V,
ID = 1.0 A
VDD = 10 V, VGS = 4 to 0 V,
280
150
V
m
S
pF
17
Crss
VDS = 10 V, VGS = 0, f = 1 MHzCoss
0.4
ID = 0.5 A, VGS = 2.5 V
80
Gate-source Threshold Voltage Vth ID = 1.0 mA, VDS = 10 V
18
0.85
ID = 1.0 A, VDS = 10 V
RDS(ON)2
RDS(ON)1
Input Capacitance
1.3
100
Ciss
ID = 1.0 A, VGS = 4.0 V
3.0
|Yfs|
82of
ns
Max
1.0
FET1 (N-ch.)
Parameter Symbol Conditions
VDS = 20 V, VGS = 0 V
Unit
Drain-source Breakdown Voltage VDSS ID = 1.0 mA, VGS = 0 V
20 V
Min Typ
μA
Gate-source Leakage Current IGSS
VGS = 8.0 V, VDS = 0 V
Zero Gate Voltage Drain Current IDSS
10
μA
Doc No.
TT4-EA-10567
Revision.
Established
:
2008-03-07
Revised
:
2013-10-17
Product Standards
MOS FET
MTM763200LBF
FET2 (P-ch.)
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2.
*1 Pulse measurement
*2 Measurement circuit for Turn-on Time / Turn-off Time
Page
Turn-off Time
*2
toff
VDD = -10 V, VGS = -4 to 0 V
ID = -1 A
35
ns
ID = -1 A
100
Turn-on Time
*2
ton
VDD = -10 V, VGS = 0 to -4 V
40
Reverse Transfer Capacitance Crss
38
S
Input Capacitance Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
440
pFOutput Capacitance Coss
RDS(ON)2
ID = -0.6 A, VGS = -2.5 V
130
Forward transfer admittance
*1
|Yfs| ID = -1.0 A, VDS = -10 V
3.0
-0.85 -1.3 V
100 130
m
200
Drain-source On-state Resistance
*1
RDS(ON)1
ID = -1.0 A, VGS = -4.0 V
Gate-source Threshold Voltage Vth ID = -1.0 mA, VDS = -10 V
-0.4
-1.0 μA
Gate-source Leakage Current IGSS
VGS = 8 V, VDS = 0 V
10
μA
Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V
Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = -1 mA, VGS = 0 V
-20 V
Parameter Symbol Conditions Min
3of8
Doc No.
TT4-EA-10567
Revision.
Established
:
2008-03-07
Revised
:
2013-10-17
P1-P3P4-P6P7-P9

MTM763200LBF

Mfr. #:
Buy MTM763200LBF
Manufacturer:
Panasonic
Description:
MOSFET SC, Nch+Pch MOS FET Dual, DCDC Converter
Lifecycle:
New from this manufacturer.
Delivery:
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