MBR4045WTG
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 125°C) Per Diode
Per Device
I
F(AV)
20
40
A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 90°C) Per Diode
I
FRM
40 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
400 A
Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz)
I
RRM
2.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Peak Surge Junction Temperature (Forward Current Applied) T
J(pk)
175 °C
Voltage Rate of Change dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad
R
q
JC
1.4 °C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad
R
q
JA
50.1 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
@ I
F
= 20 Amps, T
J
= 25°C
@ I
F
= 20 Amps, T
J
= 125°C
@ I
F
= 40 Amps, T
J
= 25°C
@ I
F
= 40 Amps, T
J
= 125°C
V
F
−
−
−
−
0.52
0.47
0.65
0.63
0.70
0.60
0.80
0.75
V
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, T
J
= 25°C
@ Rated DC Voltage, T
J
= 100°C
I
R
−
−
0.09
7.5
1.0
50
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
