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VS-60APU04HN3

P1-P3P4-P6P7-P8
VS-60EPU04HN3, VS-60APU04HN3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 95794
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Fig. 9 - Reverse Recovery Waveform and Definitions
80
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
140
180
120
160
200
60
100
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 120 A
I
F
= 60 A
I
F
= 40 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
2500
1500
3500
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
0
500
I
F
= 40 A
I
F
= 60 A
I
F
= 120 A
3000
2000
1000
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-60EPU04HN3, VS-60APU04HN3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
5
Document Number: 95794
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-60EPU04HN3 25 500 Antistatic plastic tube
VS-60APU04HN3 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AC modified www.vishay.com/doc?95541
TO-247AC www.vishay.com/doc?95542
Part marking information
TO-247AC modified-N3 www.vishay.com/doc?95442
TO-247AC-N3 www.vishay.com/doc?95007
2
- Current rating (60 = 60 A)
4
- Package:
P = TO-247AC (modified)
5
- Type of silicon:
U = ultrafast recovery
6
- Voltage rating (04 = 400 V)
- H = AEC-Q101 qualified
3
- Circuit configuration:
E = single diode
A = single diode, 3 pins
Device code
51 32 4 6 7 8
VS- 60 E P U 04 H N3
1 - Vishay Semiconductors product
7
8
- Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 21-Apr-15
1
Document Number: 95541
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247 - 50 mils L/F modified
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerance per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC
®
outline TO-247 with exception of dimension c and Q
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 Ø P 3.56 3.66 0.14 0.144
c 0.38 0.89 0.015 0.035 Ø P1 - 7.39 - 0.291
c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
Q
D
A
A2
A
A
A1
C
A
(6)
Ø P
(Datum B)
Ø P1
D1 (4)
4
E1
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
0.10 AC
M M
Ø K BD
M M
P1-P3P4-P6P7-P8

VS-60APU04HN3

Mfr. #:
Buy VS-60APU04HN3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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