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PMP4201Y,135
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PMP4201V_G_Y_4
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 04 — 28 August 2009
6 of 14
NXP Semiconductors
PMP4201V
; PMP4201G; PMP4201Y
NPN/NPN matched double transistor
s
T
amb
=2
5
°
CV
CE
=5V
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
Fig 1.
Collector current as a function of
collector-emitter v
olta
ge; typical values
Fig 2.
DC current gain as a function of collector
current; typical values
I
C
/I
B
=2
0
(1)
T
amb
=
−
55
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
= 100
°
C
I
C
/I
B
=2
0
(1)
T
amb
= 100
°
C
(2)
T
amb
=2
5
°
C
(3)
T
amb
=
−
55
°
C
Fig 3.
Base-emitter saturation v
oltage as a function
of collector current; typical values
Fig 4.
Collector
-emitter saturation volta
ge as a
function of collector current; typical values
006aaa532
V
CE
(V)
01
0
8
46
2
0.08
0.12
0.04
0.16
0.20
I
C
(A)
0
I
B
(mA) = 4.50
2.70
3.15
4.05
3.60
0.45
0.90
1.35
1.80
2.25
006aaa533
200
400
600
h
FE
0
I
C
(mA)
10
−
2
10
3
10
2
10
−
1
10
1
(3)
(1)
(2)
006aaa534
I
C
(mA)
10
−
1
10
3
10
2
11
0
0.5
0.9
1.3
0.3
0.7
1.1
V
BEsat
(V)
0.1
(1)
(2)
(3)
006aaa535
1
10
−
1
10
V
CEsat
(V)
10
−
2
I
C
(mA)
10
−
1
10
3
10
2
11
0
(1)
(2)
(3)
PMP4201V_G_Y_4
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 04 — 28 August 2009
7 of 14
NXP Semiconductors
PMP4201V
; PMP4201G; PMP4201Y
NPN/NPN matched double transistor
s
V
CE
=5V
;
T
amb
=2
5
°
CV
CE
=5V
;
T
amb
=2
5
°
C
Fig 5.
Base-emitter v
oltage as a function of
collector
current; typical values
Fig 6.
T
ransition frequency as a function of collector
current; typical values
f = 1 MHz; T
amb
=2
5
°
C
f = 1 MHz; T
amb
=2
5
°
C
Fig 7.
Collector capacitance as a function of
collector-base v
olta
ge; typical values
Fig 8.
Emitter capacitance as a function of
emitter-base v
olta
ge; typical values
006aaa536
0.6
0.8
1
V
BE
(V)
0.4
I
C
(mA)
10
−
1
10
3
10
2
11
0
006aaa537
I
C
(mA)
11
0
2
10
10
2
10
3
f
T
(MHz)
10
006aaa538
V
CB
(V)
01
0
8
46
2
2
1
3
5
4
C
c
(pF)
0
006aaa539
V
EB
(V)
06
4
2
9
11
7
13
15
C
e
(pF)
5
PMP4201V_G_Y_4
© NXP B.V
. 2009. All rights reserved.
Product data sheet
Rev
. 04 — 28 August 2009
8 of 14
NXP Semiconductors
PMP4201V
; PMP4201G; PMP4201Y
NPN/NPN matched double transistor
s
8.
Application inf
ormation
9.
P
ac
ka
ge outline
Fig 9.
Current mirror
Fig 10.
Differential amplifier
006aaa523
V
CC
l
out
R1
TR2
TR1
006aaa525
IN2
IN1
TR2
TR1
OUT2
V
+
V
−
OUT1
Fig 11.
Pac
kage outline SO
T666
Fig 12.
Pac
kage outline SO
T353 (SC-88A)
Fig 13.
Pac
kage outline SO
T363 (SC-88)
Dimensions in mm
04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
12
3
4
5
6
0.6
0.5
0.3
0.1
04-11-16
Dimensions in mm
0.25
0.10
0.3
0.2
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
13
2
4
5
06-03-16
Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
13
2
4
65
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PMP4201Y,135
Mfr. #:
Buy PMP4201Y,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT MATCHED PAIR
Lifecycle:
New from this manufacturer.
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