OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK9528-100A,127

P1-P3P4-P6P7-P9
Philips Semiconductors Product specification
TrenchMOS transistor BUK9528-100A
Logic level FET BUK9628-100A
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); paramter V
GS
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions: I
D
= 25 A;
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
0
10
20
30
40
50
60
0246810
VDS/V
ID/A
2
.8
3
.0
3
.6
3
.8
4.0
5.0
10.0
VGS/V =
2.2
2.6
3
.4
3.2
2
.4
0
5
10
15
20
25
0.0 2.0 4.0 6.0
VGS/V
ID/A
T
j/C= 175 25
25
30
35
40
45
50
55
60
65
5 1525354555
ID/A
RDS(ON)/mOhm
3.2
3.6
3.8
3.0
3.4
5.0
4.0
0
10
20
30
40
50
60
70
80
90
100
0 20406080100
ID/A
gfs/S
15
16
17
18
19
20
21
22
23
345678910
VGS/V
RDS(ON) Ohm
0.5
1
1.5
2
2.5
3
-100 -50 0 50 100 150 200
Tmb / degC
a
Rds(on) normalised to 25degC
March 2000 4 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor BUK9528-100A
Logic level FET BUK9628-100A
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.13. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 25 A; parameter V
DS
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.16. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
-100 -50 0 50 100 150 200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
1
2
3
4
5
0 102030405060
QG / nC
VGS / V
VDS = 14V
VDS = 44V
0 0.5 1 1.5 2 2.5 3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2% typ
98%
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSDS/V
IF/A
25
o
C
Tj/C= 175
o
C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.01 0.1 1 10 100
VDS/V
Capacitance / pF
Ciss
Coss
Crss
20 40 60 80 100 120 140 160 180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
March 2000 5 Rev 1.000
Philips Semiconductors Product specification
TrenchMOS transistor BUK9528-100A
Logic level FET BUK9628-100A
Fig.17. Avalanche energy test circuit.
Fig.18. Maximum permissible repetitive avalanche
current(I
AV
) versus avalanche time(t
AV
) for unclamped
inductive loads.
Fig.19. Switching test circuit.
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
W
DSS
= 0.5 ⋅LI
D
2
⋅BV
DSS
/(BV
DSS
−V
DD
)
1
10
100
0.001 0.01 0.1 1 10
Avalanche Time, t
AV
(ms)
I
AV
Tj prior to avanche 150ºC
25ºC
March 2000 6 Rev 1.000
P1-P3P4-P6P7-P9

BUK9528-100A,127

Mfr. #:
Buy BUK9528-100A,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 100V 49A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet