STTA306B-TR

P1-P3 P4-P6 P7-P8

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0 20 40 60 80 100 120 140 160 180 200

0

50

100

150

200

250

300

tfr(ns)

IF=IF(av)

VFR=1.1*VF max.

Tj=125°C

dIF/dt(A/µs)

Fig. 9:

Forward recovery time versus dI

F

/dt (90%

confidence).

1 10 100 200

1

2

5

10

VR(V)

C(pF)

F=1MHz

Fig. 10:

Junction capacitance versus reverse

voltage applied (typical values).

0 20 40 60 80 100 120 140 160 180 200

0

2

4

6

8

10

12

14

16

18

20

22

24

VFP(V)

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

Fig. 8:

Transient peak forward voltage versus

dI

F

/dt (90% confidence).

25 50 75 100 125

0.7

0.8

0.9

1.0

1.1

IRM

S factor

Tj(°C)

Fig. 7:

Relative variation of dynamic parameters

versus junction temperature (reference Tj=125°C).

STTA306B

4/8

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TOTAL LOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

SWITCHING

LOSSES

in the diode

CONDUCTION

LOSSES

in the diode

SWITCHING

LOSSES

in the transistor

due to the diode

REVERSE

LOSSES

in the diode

The TURBOSWITCH

TM

is especially designed to

provide the lowest overall power losses in any

Freewheel Mode application (see fig. A) consider-

ing both the diode and the companion transistor,

thus optimizing the overall performance in the end

application.

The way of calculating the power losses is given

below :

APPLICATION DATA

Fig. A :

"FREEWHEEL" MODE

DIODE:

TURBOSWITCH

IL

LOAD

TRANSISTOR

SWITCHING

tp

T

F=1/T δ= tp/T

V

R

STTA306B

5/8

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I

I

F

Rd

I

R

V

R

V

to

V

F

V

Fig. B :

STATIC CHARACTERISTICS

Conduction

losses :

P1 = V

to

x I

F(AV)

+ R

d

x I

F

2

(RMS)

Reverse

losses :

P2 = V

R

x I

R x (1 -

δ

)

APPLICATION DATA (Cont’d)

Turn-on

losses :

(in the transistor, due to the diode)

P5 =

V

R

×

I

RM

2

×

(

3

+

2

×

S

)

×

F

6

x

dI

F

⁄

dt

+

V

R

×

I

RM

×

I

L

×

(

S

+

2

)

×

F

2

×

dI

F

⁄

dt

Turn-off

losses (in the diode) :

P3 =

V

R

×

I

RM

2

×

S

×

F

6

x

dI

F

⁄

dt

P3 and P5 are suitable for power MOSFET and

IGBT

Fig. C :

TURN-OFF CHARACTERISTICS

dI

F

/dt = V

R

/L

dI /dt

R

tbta

I

RM

V

R

I

V

t

S=tb/ta

trr = ta + tb

RECTIFIER

OPERATION

V

I

IL

t

TRANSISTOR

dI /dt

F

dI /dt

R

tbta

I

RM

VR

DIODE

I

V

t

trr = ta + tb S = tb / ta

STTA306B

6/8

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P1-P3 P4-P6 P7-P8

STTA306B-TR

Mfr. #:

Buy STTA306B-TR

Manufacturer:

STMicroelectronics

Description:

DIODE GEN PURP 600V 3A DPAK

Lifecycle:

New from this manufacturer.

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