NP2300SAT3G

© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 5
1 Publication Order Number:
NP0640S/D
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR1089CORE, IEC 6100045, ITU
K.20/21/45, IEC 60950, TIA968A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
Device
V
DRM
V
(BO)
V
T
I
DRM
I
(BO)
I
T
I
H
V V V
mA
mA A mA
NP0640SxT3G 58 77 4 5 800 2.2 150
NP0720SxT3G 65 88 4 5 800 2.2 150
NP0900SxT3G 75 98 4 5 800 2.2 150
NP1100SxT3G 90 130 4 5 800 2.2 150
NP1300SxT3G 120 160 4 5 800 2.2 150
NP1500SxT3G 140 180 4 5 800 2.2 150
NP1800SxT3G 170 220 4 5 800 2.2 150
NP2100SxT3G 180 240 4 5 800 2.2 150
NP2300SxT3G 190 260 4 5 800 2.2 150
NP2600SxT3G 220 300 4 5 800 2.2 150
NP3100SxT3G 275 350 4 5 800 2.2 150
NP3500SxT3G 320 400 4 5 800 2.2 150
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Specification
Waveform x = series ratings
Unit
Voltage
ms
Current
ms
A B C
GR1089CORE 2x10 2x10 150 250 500
A(pk)
TIA968A 10x160 10x160 90 150 200
GR1089CORE 10x360 10x360 75 125 175
TIA968A 10x560 10x560 50 100 150
ITUT K.20/21 10x700 5x310 75 100 200
GR1089CORE 10x1000 10x1000 50 80 100
* Recognized Components
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 350 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1 MT2
SMB
JEDEC DO214AA
CASE 403C
xxxx = Specific Device Code
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
xxxxG
G
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See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
NP Series
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics (Note 1)
Symbol Min Typ Max Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V
(BO)
77
88
98
130
160
180
220
240
260
300
350
400
V
OffState Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V
DRM
58
65
75
90
120
140
170
180
190
220
275
320
V
Off State Current ( V
D1
= 50 V ) Both Polarities
( V
D2
= V
DRM
) Both Polarities
I
DRM1
I
DRM2
2.0
5.0
mA
mA
Holding Current (Both Polarities) (Note 4) V
S
= 500 V; I
T
= 2.2 A I
H
150 250 mA
OnState Voltage I
T
= 1.0 A(pk) (PW = 300 mSec, DC = 2%)
V
T
4.0 V
Maximum NonRepetitive Rate of Change of OnState Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt 500
A/mSec
Critical Rate of Rise of OffState Voltage
(Linear Waveform, V
D
= 0.8 V
DRM
, T
J
= 25°C)
dv/dt 5.0
kV/mSec
CAPACITANCE
Characteristics Symbol
Typ
Unit
A B C
(f=1.0 MHz, 1.0 V
rms
, 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
C
o
84
79
65
58
46
44
39
37
36
33
31
28
129
123
122
95
75
70
59
59
56
52
47
44
222
198
122
154
120
113
99
97
56
81
76
71
pF
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/mSec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
NP Series
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3
SURGE RATINGS
Characteristics Symbol A B C Unit
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 5, 6 and 7)
2 x 10 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
I
PPS1
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
150
90
75
50
75
50
250
150
125
100
100
80
500
200
150
150
200
100
A(pk)
5. Allow cooling before testing second polarity.
6. Measured under pulse conditions to reduce heating.
7. Nominal values may not represent the maximum capability of a device.
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
T
STG
Storage Temperature Range 65 to +150 °C
T
J
Operating Temperature Range 40 to +150 °C
R
0JA
Thermal Resistance: JunctiontoAmbient Per EIA/JESD513, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
90 °C/W
Figure 1. Exponential Decay Pulse Waveform
TIME (ms)
0
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
+VoltageVoltage
I
+I
V
T
V
DRM
V
(BO)
I
T
I
(BO)
I
H
Figure 2. Voltage Current Characteristics of TSPD
Symbol Parameter
V
DRM
Peak Off State Voltage
V
(BO)
Breakover Voltage
I
(BO)
Breakover Current
I
H
Holding Current
V
T
On State Voltage
I
T
On State Current

NP2300SAT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 50A 230V TSPD SMB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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