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NTJD4401NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 7
1 Publication Order Number:
NTJD4401N/D
NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N−Channel, SC−88
ESD Protection
Features
• Small Footprint (2 x 2 mm)
• Low Gate Charge N−Channel Device
• ESD Protected Gate
• Same Package as SC−70 (6 Leads)
• AEC−Q101 Qualified and PPAP Capable − NVJD4401N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Load Power Switching
• Li−Ion Battery Supplied Devices
• Cell Phones, Media Players, Digital Cameras, PDAs
• DC−DC Conversion
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current
(Based on R
q
JA
)
Stead
y
State
T
A
= 25°C
I
D
0.63
A
T
A
= 85°C 0.46
Power Dissipation
(Based on R
q
JA
)
Stead
y
State
T
A
= 25°C
P
D
0.27
W
T
A
= 85°C 0.14
Continuous Drain
Current
(Based on R
q
JL
)
Stead
y
State
T
A
= 25°C
I
D
0.91
A
T
A
= 85°C 0.65
Power Dissipation
(Based on R
q
JL
)
Stead
y
State
T
A
= 25°C
P
D
0.55
W
T
A
= 85°C 0.29
Pulsed Drain Current
t ≤10 ms
I
DM
±1.2 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Continuous Source Current (Body Diode) I
S
0.63 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Typ Max Units
Junction−to−Ambient – Steady State
R
q
JA
400 458
°C/W
Junction−to−Lead (Drain) – Steady State
R
q
JL
194 252
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
MARKING DIAGRAM &
PIN ASSIGNMENT
www.onsemi.com
V
(BR)DSS
R
DS(on)
Typ I
D
Max
20 V
0.29 W @ 4.5 V
0.36 W @ 2.5 V
0.63 A
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TD M G
G
1
6
1
TD = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
Top View
SC−88 (SOT−363)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
SC−88/SOT−363
CASE 419B
STYLE 28
NTJD4401N, NVJD4401N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
20 27 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
22 mV/ °C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 16 V 1.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V 10
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.6 0.92 1.5 V
Gate Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−2.1 mV/ °C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 0.63 A 0.29 0.375 W
V
GS
= 2.5 V, I
D
= 0.40 A 0.36 0.445
Forward Transconductance g
FS
V
DS
= 4.0 V, I
D
= 0.63 A 2.0 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 20 V
33 46
pF
Output Capacitance C
OSS
13 22
Reverse Transfer Capacitance C
RSS
2.8 5.0
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V,
I
D
= 0.63 A
1.3 3.0
nC
Threshold Gate Charge Q
G(TH)
0.1
Gate−to−Source Charge Q
GS
0.2
Gate−to−Drain Charge Q
GD
0.4
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td
(ON)
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.5 A, R
G
= 20 W
0.083 ms
Rise Time tr 0.227
Turn−Off Delay Time td
(OFF)
0.786
Fall Time tf 0.506
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
=0.23 A
T
J
= 25°C 0.76 1.1
V
T
J
= 125°C 0.63
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 0.63 A
0.410
ms
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJD4401N, NVJD4401N
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
1.4
1
62
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0.6
0.2
0
Figure 1. On−Region Characteristics
0.4
1.2
21.2 2.
4
1
0.6
0.2
0.8
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.4 1
0.3
0.2
0
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.7
0.2 0.6
T
J
= −55°C
T
J
= 125°C
75 150
I
D
= 0.63 A
V
GS
= 4.5 V
and 2.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
2
1.2 V
0 1.4
Figure 6. Capacitance Variation
1.4 V
1.6 V
1.8 V
108
V
DS
≥ 10 V
0.4
V
GS
= 2 V
V
GS
= 4.5 V to 2.2 V
0.4
0.8
1.2
0.8
0.4
1.6
T
J
= 125°C
1.20.8
V
GS
= 4.5 V
T
J
= −55°C
T
J
= 25°C
0.1
0.4 1
0.3
0.2
0
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.7
0.2 0.6
T
J
= 125°C
01.
4
0.4
1.20.8
V
GS
= 2.5 V
T
J
= −55°C
T
J
= 25°C
V
GS
= 0 V
100
80
60
40
20
0
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
T
J
= 25°C
C
oss
C
iss
C
rss
52015
0.6
0.5
0.5
0.6
1.8
1.6
P1-P3P4-P5

NTJD4401NT1G

Mfr. #:
Buy NTJD4401NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V Dual N-Channel ESD Protection
Lifecycle:
New from this manufacturer.
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