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SUD45P03-15-E3

P1-P3P4-P5
SUD45P03-15
Siliconix
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-51
P-Channel 30-V (D-S), 150C MOSFET
Product Summary
V
DS
(V) r
DS(on)
() I
D
(A)
a
30
0.015 @ V
GS
= –10 V 13
–
30
0.024 @ V
GS
= –4.5 V 8
TO-252
SGD
Top View
Drain Connected to Tab
Order Number:
SUD45P03-15
S
G
D
P-Channel MOSFET
Absolute Maximum Ratings (T
A
= 25C Unless Otherwise Noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
–30
V
Gate-Source Voltage V
GS
20
V
Continuous Drain Current
b
T
A
= 25C
I
D
13
Continuous
Drain
Current
b
T
A
= 100C
I
D
8
A
Pulsed Drain Current I
DM
100
A
Continuous Source Current (Diode Conduction) I
S
–13
Maximum Power Dissipation
b
T
C
= 25C
P
D
70
W
Maximum
Power
Dissipation
b
T
A
= 25C
P
D
4
a
W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C
Thermal Resistance Ratings
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b
R
thJA
30
C/W
Maximum Junction-to-Case R
thJC
1.8
C/W
Notes
a. Calculated Rating for T
A
= 25C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.
Siliconix
SUD45P03-15
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-52
Specifications (T
J
= 25C Unless Otherwise Noted)
Parameter Symbol Test Condition Min Typ
a
Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= –250 mA
–30
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= –250 mA –1.0
V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V
"100 nA
Zero Gate Voltage Drain Current
V
DS
= –30 V, V
GS
= 0 V –1
mA
Zero
Gate
Voltage
Drain
Current
DSS
V
DS
= –30 V, V
GS
= 0 V, T
J
= 125C –50
mA
On State Drain Current
b
V
DS
= –5 V, V
GS
= –10 V –50
A
On
-
State
Drain
Current
b
D(on)
V
DS
= –5 V, V
GS
= –4.5 V –20
A
b
V
GS
= –10 V, I
D
= –13 A 0.012 0.015
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –10 V, I
D
= –13 A, T
J
= 125C 0.018 0.026
W
V
GS
= –4.5 V, I
D
= –13 A 0.020 0.024
Forward Transconductance
b
g
fs
V
DS
= –15 V, I
D
= –13 A 20 S
Dynamic
a
Input Capacitance C
iss
3200
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= –25 V, F = 1 MHz
800
pF
Reverse Transfer Capacitance C
rss
280
Total Gate Charge
c
Q
g
50 125
Gate-Source Charge
c
Q
gs
V
DS
= –15 V, V
GS
= –10 V, I
D
= –45 A
14
nC
Gate-Drain Charge
c
Q
gd
6.2
Turn-On Delay Time
c
t
d(on)
13 20
Rise Time
c
t
r
V
DD
= –15 V, R
L
= 0.33 W
10 20
ns
Turn-Off Delay Time
c
t
d(off)
I
D
^ –45 A, V
GEN
= –10 V, R
G
= 2.4 W
50 100
ns
Fall Time
c
t
f
20 40
Source-Drain Diode Ratings and Characteristic (T
C
= 25C)
Pulsed Current I
SM
100 A
Diode Forward Voltage
b
V
SD
I
F
= –45 A, V
GS
= 0 V 1.0 1.5 V
Source-Drain Reverse Recovery Time t
rr
I
F
= –45 A, di/dt = 100 A/ms 55 100 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
SUD45P03-15
Siliconix
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com
S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
1-53
Typical Characteristics (25C Unless Otherwise Noted)











    
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
V
DS
– Drain-to-Source Voltage (V)
– Drain Current (A)I
D
V
GS
– Gate-to-Source Voltage (V)
– Drain Current (A)I
D
– Gate-to-Source Voltage (V) – On-Resistance (
Q
g
– Total Gate Charge (nC)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
C – Capacitance (pF)
r
DS(on)
)V
GS
– Transconductance (S)g
fs



















25C
125C
5 V
T
C
= –55C
V
DS
= 15 V
I
D
= 45 A
V
GS
= 10, 9, 8 V
6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
= –55C
25C
125C
2 V
3 V
C
oss
C
iss
I
D
– Drain Current (A)
4 V
7 V
P1-P3P4-P5

SUD45P03-15-E3

Mfr. #:
Buy SUD45P03-15-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 13A 70W
Lifecycle:
New from this manufacturer.
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