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SQJ202EP-T1_GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
SQJ202EP
www.vishay.com
Vishay Siliconix
S15-2474-Rev. A, 19-Oct-15
7
Document Number: 62926
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transconductance
Capacitance
Gate Charge
0
16
32
48
64
80
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
9
18
27
36
45
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125°C
T
C
= 25
°
C
0.000
0.001
0.002
0.003
0.004
0.005
0 10 20 30 40 50
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
24
48
72
96
120
0 4 8 12 16 20
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
600
1200
1800
2400
3000
0 2 4 6 8 10 12
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 8 16 24 32 40
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 6 V
I
D
= 60A
SQJ202EP
www.vishay.com
Vishay Siliconix
S15-2474-Rev. A, 19-Oct-15
8
Document Number: 62926
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
- 1.3
- 0.9
- 0.5
- 0.1
0.3
0.7
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 20 A
V
GS
= 4.5 V
V
GS
= 10 V
0.000
0.003
0.006
0.009
0.012
0.015
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150
°
C
T
J
= 25
°
C
12
13
14
15
16
17
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS
(
on
)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms, 1 s,
10 s, DC
I
D
Limited
SQJ202EP
www.vishay.com
Vishay Siliconix
S15-2474-Rev. A, 19-Oct-15
9
Document Number: 62926
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62926
.
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
10
-1
10
-4
1
2
1
0.1
0.01
0.2
0.1
0.05
Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
Single
P1-P3P4-P6P7-P9P10-P12P13-P13

SQJ202EP-T1_GE3

Mfr. #:
Buy SQJ202EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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