ZXMC6A09DN8
ISSUE 4 - MAY 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
60 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1.0 AV
DS
=60V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.0 V I
D
=250A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.070
⍀
⍀
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Forward Transconductance
(1)(3)
g
fs
15 S V
DS
=15V,I
D
=8.2A
DYNAMIC
(3)
Input Capacitance C
iss
1407 pF
V
DS
=40V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
121 pF
Reverse Transfer Capacitance C
rss
59 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
4.9 ns
V
DD
=30V, I
D
=1.0A
R
G
6.0Ω,V
GS
=10V
Rise Time t
r
3.3 ns
Turn-Off Delay Time t
d(off)
28.5 ns
Fall Time t
f
11.0 ns
Gate Charge Q
g
12.4 nC V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge Q
g
24.2 nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge Q
gs
5.2 nC
Gate-Drain Charge Q
gd
3.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V T
J
=25°C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
26.3 ns T
J
=25°C, I
F
=3.5A,
di/dt= 100A/s
Reverse Recovery Charge
(3)
Q
rr
26.6 nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
